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rg-58 u Datasheet PDF File

For rg-58 u Found Datasheets File :: 1651 Search Time::1.328ms
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				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	...DD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	...DD = -50V --- ID = -8.4A ns --- RG = 9.1 --- RD = 6.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O u RC E ...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	...VDD = -50V --- ID = -11A ns --- RG = 5.1 --- RD = 4.2, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...58 4) 1.15 (.04 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O u RC E ...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...VDD = -30V --- ID = -18A ns --- RG = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STW8NB100
OCR Text	...nditions VDD = 500V, ID = 3.5 A RG = 4.7, VGS = 10V (see test circuit, Figure 3) VDD = 800V, ID = 7 A, VGS = 10V, RG = 4.7 Min. Typ. 32 13 6...58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0....
Description	N-CHANNEL 1000V - 1.3 OHM - 7.3A - TO-247 POWERMESH MOSFET
File Size	253.36K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF730B IRFS730B IRF730
OCR Text	... 5) VDD = 200 V, ID = 5.5 A, RG = 25 (Note 4, 5) -------- 15 55 85 50 25 4.3 11 40 120 180 110 33 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dra...
Description	400V N-Channel MOSFET
File Size	895.90K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7311
OCR Text	... = 10V 17 25 ID = 1.0A ns 38 57 RG = 6.0 31 47 R D = 10 900 --- VGS = 0V 430 --- pF VDS = 15V 200 --- = 1.0MHz, See Fig. 9 Source-Drain...58 Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7...
Description	HEXFET Power MOSFET
File Size	154.76K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7413A IRF7413ATR
OCR Text	... 15V 50 --- ID = 7.3A ns 52 --- RG = 6.2 46 --- RD = 2.0, See Fig. 10 1800 --- VGS = 0V 680 --- pF VDS = 25V 240 --- = 1.0MHz, See Fig. 5 ...58 1.0 110 300 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. ...
Description	Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm) Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm) 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	112.28K / 9 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5019HVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 4400 600 230 200 30 80 12 14 55 11 5280 840 350 300 45 120 25 30 80 20 ns n...58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.1...
Description	POWER MOS V 500V 24A 0.190 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC ...58 (.535) 17.96 (.707) 17.70 (.697) Drain 19.05 (0.750) 12.70 (0.500) Source Gate 3.56 (.1...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

For rg-58 u Found Datasheets File :: 1651 Search Time::1.328ms
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