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TriQuint Semiconductor,Inc.
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| Part No. |
TQHIP
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| OCR Text |
power mesfet foundry service features ? power mesfet process ? interconnects: ? 2 global (one airbridge) ? 1 local ? high-q passives ? bulk & thin film resistors ? backside vias optional ? high volume production processes ? v... |
| Description |
nullPrecision, 100UA Gain Selectable Amplifier
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| File Size |
110.60K /
4 Page |
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OKI[OKI electronic componets]
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| Part No. |
KGL4201
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| OCR Text |
...oplating, is used for ground or power supply lines because of its lower resistance. An optional buried "p" channel structure is adopted for ...MESFET MESFET Pseudomorphic-inverted HEMT Pseudomorphic BP--MESFET Basic Gate Circuit DCFL or SBFL D... |
| Description |
10-Gbps GaAs Family High-Speed Optical Communications System
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| File Size |
296.16K /
24 Page |
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OKI[OKI electronic componets]
OKI electronic components
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| Part No. |
KGL4215
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| OCR Text |
...on: 10-Gbps data rate (min) Low-power dissipation: 600 mW (typ.) using 2-V power-supply 0.2-m gate length GaAs MESFET process MCFF ( Memory Cell type Flip Flop ) technology 24-pin ceramic package
APPLICATION
* High-speed optical communi... |
| Description |
10-Gbps Decision Circuit 0.2μm Gate Length GaAs MESFET Technology
10-Gbps Decision Circuit 0.2レm Gate Length GaAs MESFET Technology
10-Gbps Decision Circuit 0.2m Gate Length GaAs MESFET Technology
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| File Size |
56.63K /
8 Page |
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OKI[OKI electronic componets]
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| Part No. |
KGL4222 KGL4217 KGL4221
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| OCR Text |
...peration, high-sensitivity, low power dissipation, and is mounted in a 24-pin ceramic package. The KGL4217 is used in high-speed optical com...MESFET process * KGL4217 Limiting Amplifier: 24-pin ceramic package * KGL4221 Mux and KGL4222 Demux:... |
| Description |
10-Gbps GaAs Optical Communications Family
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| File Size |
88.23K /
18 Page |
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it Online |
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United Monolithic Semiconductors GmbH
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA116
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| OCR Text |
Power 12dB Input/Output Return Loss Typical 2-10GHz Frequency Bandwidth +8 Volts Single Bias Supply DC Decoupled RF Output Chip Size : 1.62m...MESFET Amplifier
LMA116
Description
The Filtronic LMA116 is a GaAs monolithic distributive am... |
| Description |
2-10GHz MESFET Amplifier 2 - 10GHz的场效应管放大器
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| File Size |
160.40K /
4 Page |
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it Online |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA183
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| OCR Text |
Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX...MESFET Amplifier
LMA183
Description
The Filtronic LMA183 is a GaAs monolithic distributive am... |
| Description |
2-18 GHz MESFET Amplifier
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| File Size |
63.58K /
3 Page |
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it Online |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
LMA184
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| OCR Text |
Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply DC Decoupled RF Output Chip Size : 1.62mmX...MESFET Amplifier
LMA184
Description
The Filtronic LMA184 is a GaAs monolithic distributive am... |
| Description |
2-18 GHz MESFET Amplifier
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| File Size |
67.13K /
3 Page |
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it Online |
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OKI electronic componet...
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| Part No. |
KGL4201
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| OCR Text |
...oplating, is used for ground or power supply lines because of its lower resistance. an optional buried p channel structure is adopted for re...mesfet dcfl or sbfl i-line printing 0.5 30 25 < 2.4 gbps standard cell mesfet dcfl or sbfl pel < 0.2... |
| Description |
10-Gbps GaAs Family High-Speed Optical Communications System
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| File Size |
300.93K /
24 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
TA0012
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| OCR Text |
Power, High Efficiency HBT GSM Power Amplifier
RF Micro Devices introduces a new power amplifier for GSM applications based...MESFET IC implementation with additional components such as a negative voltage generator and a suppl... |
| Description |
New High Power, High Efficiency HBT GSM Power Amplifier
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| File Size |
73.22K /
4 Page |
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it Online |
Download Datasheet |
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