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| Part No. |
UPD78F9436GB-8EU-A
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| OCR Text |
...e or a reflected wave may cause malfunction. if the input of the cmos device stays in the area between v il (max) and v ih (min) due to noise, etc., the device may malfunction. take care to prevent chattering noise from entering the d... |
| Description |
8-BIT, MROM, 5 MHz, MICROCONTROLLER, PQFP64
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| File Size |
2,991.05K /
354 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT25G101
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| OCR Text |
...onductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of s... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
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| File Size |
193.24K /
4 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT25Q102
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| OCR Text |
...onductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of s... |
| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
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| File Size |
150.88K /
6 Page |
View
it Online |
Download Datasheet |
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