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  isotop-4 Datasheet PDF File

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    APT8015JVFR APT8015

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ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...h optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Fast Recovery Body Diode * Lower Leakage * Faster Switching...4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Ga...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

File Size 77.92K  /  4 Page

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ...h optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 100% Avalanche Tested...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 75.34K  /  4 Page

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    APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018JN
OCR Text ISOTOP(R) "UL Recognized" File No. E145592 (S) POWER MOS IV (R) MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter ...4 A nA Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to S...
Description POWER MOS IV 800V 40A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 60.06K  /  4 Page

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    APT8020JFLL APT6017JFLL

ADPOW[Advanced Power Technology]
Part No. APT8020JFLL APT6017JFLL
OCR Text ... Pulsed Drain Current 1 SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT...4.16 -55 to 150 300 33 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total P...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.28K  /  2 Page

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    APT8020JLL

Advanced Power Technology
Part No. APT8020JLL
OCR Text ...ce Voltage S G D S SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT...4.16 300 33 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 3000...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.75K  /  2 Page

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    APT8024JFLL

ADPOW[Advanced Power Technology]
Part No. APT8024JFLL
OCR Text ... Pulsed Drain Current 1 SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.21K  /  2 Page

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    APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL

ADPOW[Advanced Power Technology]
Part No. APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL
OCR Text ...ce Voltage S G D S SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Popular SOT...4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.72K  /  2 Page

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    APT8028JVR APT5010JVR

ADPOW[Advanced Power Technology]
Part No. APT8028JVR APT5010JVR
OCR Text ...h optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 100% Avalanche Tested...4 -55 to 150 300 16 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Powe...
Description POWER MOS V 800V 28A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 71.26K  /  4 Page

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    APT8030JN APT8035JN

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030JN APT8035JN
OCR Text ISOTOP(R) "UL Recognized" File No. E145592 (S) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drai...4.16 800 25 100 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage T...
Description POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS V 800V 27.0A 0.30/0.35 Ohm

File Size 61.59K  /  4 Page

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    APT8030JVFR

ADPOW[Advanced Power Technology]
Part No. APT8030JVFR
OCR Text ...h optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Fast Recovery Body Diode * Lower Leakage * Faster Switching...4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.94K  /  4 Page

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