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  id-3.1a Datasheet PDF File

For id-3.1a Found Datasheets File :: 200    Search Time::1.797ms    
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    Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT8024LLL APT8024B2LL APT8024B2LL_05 APT8024B2LL05
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 31A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 159.97K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT8024LFLL APT8024B2FLL APT8024B2FLLG
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 31A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = ...
Description POWER MOS 7 FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 238.14K  /  5 Page

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    IRFZ44Z IRFZ44ZL IRFZ44ZS

IRF[International Rectifier]
Part No. IRFZ44Z IRFZ44ZL IRFZ44ZS
OCR Text ...ions. G S RDS(on) = 13.9m ID = 51A TO-220AB IRFZ44Z D2Pak IRFZ44ZS TO-262 IRFZ44ZL Absolute Maximum Ratings Parameter ID...31A VDS = VGS, ID = 250A VDS = 25V, ID = 31A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)

File Size 330.41K  /  12 Page

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    ADPOW[Advanced Power Technology]
Part No. APT6017JLL_04
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 31A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 161.78K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT6017JFLL_04
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 31A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 162.34K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT5518SFLL APT5518BFLL APT5518BFLLG
OCR Text ... MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...31A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 31A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2...
Description POWER MOS 7 R FREDFET
POWER MOS 7 FREDFET

File Size 91.70K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT31N80JC3
OCR Text ... MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25C unless otherwise specified. APT31N80JC3 UNIT...31A, TJ = 125C) Repetitive Avalanche Current Repetitive Avalanche Energy 7 7 Volts Watts W/C C V...
Description Super Junction MOSFET

File Size 248.14K  /  5 Page

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    IRF[International Rectifier]
Part No. 19MT050XF
OCR Text ...ute Maximum Ratings Parameters ID IDM PD VGS VISOL dv/dt Continuos Drain Current @ VGS = 10V Pulsed Drain Current Maximum Power Dissipation...31A V DS = V GS , I D = 250A V DS = V DS = V GS = V GS = 500V, V GS = 0V 400V, V GS = 0V, T J = 125C...
Description 500V Single N-Channel HEXFET Power MOSFET in a MTP package
FULL BRIDGE FREDFET MTP HEXFET POWER MOSFET
From old datasheet system

File Size 184.40K  /  10 Page

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    IRFP140

FAIRCHILD SEMICONDUCTOR CORP
Part No. IRFP140
OCR Text .... . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...31A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 28A, dISD/dt = 100A/s TJ = 25oC, ISD = 28A, dISD/dt = 100...
Description 31 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
31A, 100V, 0.077 Ohm, N-Channel Power MOSFET

File Size 99.58K  /  7 Page

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    IRLI2505

IRF[International Rectifier]
Part No. IRLI2505
OCR Text ...S = 55V G S RDS(on) = 0.008 ID = 58A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ...31A 0.010 VGS = 5.0V, ID = 31A 0.013 VGS = 4.0V, ID = 26A 2.0 V VDS = VGS , ID = 250A --- S VDS ...
Description HEXFET? Power MOSFET
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET

File Size 99.65K  /  8 Page

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