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  id-0.56a Datasheet PDF File

For id-0.56a Found Datasheets File :: 152    Search Time::1.922ms    
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    IRL3103L IRL3103S IRL3103STRR IRL3103STRL

IRF[International Rectifier]
Part No. IRL3103L IRL3103S IRL3103STRR IRL3103STRL
OCR Text ...iety of applications. G S ID = 64A The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It pr...0.63 16 34 22 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

File Size 123.16K  /  10 Page

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    IRL3103

International Rectifier
Part No. IRL3103
OCR Text ...S = 30V RDS(on) = 12m G S ID = 64A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced proc...0.63 16 34 22 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V...
Description Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)

File Size 153.69K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. HUF76129S3S HUF76129P3 FN4395
OCR Text .... . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 56A/ 30V/ 0.016 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
From old datasheet system

File Size 108.32K  /  10 Page

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    IRFP90N20D

IRF[International Rectifier]
Part No. IRFP90N20D
OCR Text ... 200V RDS(on) max 0.023 ID 94Ao Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche V...
Description 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A?)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A?

File Size 87.67K  /  8 Page

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    HUF76129P3 HUF76129S3 HUF76129S3S HUF76129S3ST HUF76129S3STK

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF76129P3 HUF76129S3 HUF76129S3S HUF76129S3ST HUF76129S3STK
OCR Text .... . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 56A, 30V, 0.016 Ohm N-Channel, Logic Level UltraFET Power MOSFETs
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

File Size 219.97K  /  11 Page

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    HUFA75339G3 HUFA75339P3 HUFA75339S3S HUFA75332S3S

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA75339G3 HUFA75339P3 HUFA75339S3S HUFA75332S3S
OCR Text .... . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
75A 55V 0.012 Ohm N-Channel UltraFET Power MOSFETs
60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs

File Size 225.41K  /  10 Page

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    IRFB260N IRFB260

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFB260N IRFB260
OCR Text ... 200V RDS(on) max 0.040 ID 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Vo...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.040ohm, Id=56A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.040ohm,身份证\u003d 56A条)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)

File Size 89.30K  /  8 Page

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    IRLR110A

International Rectifier
Part No. IRLR110A
OCR Text ...A BVDSS = 100 V RDS(on) = 0.44 ID = 4.7 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Cur...
Description ADVANCED POWER MOSFET

File Size 242.13K  /  9 Page

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    SANYO[Sanyo Semicon Device]
Part No. FSS238
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Conditions Ratings 30 20 1...
Description Load Switching Applications
N-Channel Silicon MOSFET

File Size 71.30K  /  4 Page

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    IRHNA597064 IRHNA593064

IRF[International Rectifier]
Part No. IRHNA597064 IRHNA593064
OCR Text ...RHNA593064 300K Rads (Si) 0.016 ID -56A* -56A* IRHNA597064 60V, P-CHANNEL 5 TECHNOLOGY SMD-2 International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been...
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

File Size 223.73K  /  8 Page

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