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goldmos Datasheet PDF File

For goldmos Found Datasheets File :: 158 Search Time::1.438ms
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				ERICSSON[Ericsson]
Part No.	PTF10160
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10160 is an internally matched 85-watt goldmos FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metalli...
Description	85 Watts, 860-960 MHz goldmos Field Effect Transistor
File Size	251.71K / 7 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10139
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10139 is a goldmos FET intended for amplifier applications to 860-960 MHz. This 60-watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and f...
Description	60 Watts, 860-960 MHz goldmos Field Effect Transistor 60瓦，860-960兆赫goldmos场效应晶体管
File Size	114.14K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10149
OCR Text	goldmos Field Effect Transistor Description The PTF 10149 is an internally matched 70-watt goldmos FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. It operates with 50% efficiency and 16 dB typical gain. Nitri...
Description	70 Watts, 92160 MHz goldmos Field Effect Transistor 70 Watts, 921-960 MHz goldmos Field Effect Transistor
File Size	214.08K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTF10193
OCR Text	goldmos Field Effect Transistor Description The PTF 10193 is an internally matched, 12-watt goldmos FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical ...
Description	12 Watts, 860-960 MHz goldmos⑩ Field Effect Transistor 12 Watts, 860-960 MHz goldmos Field Effect Transistor
File Size	330.49K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTF10195
OCR Text	goldmos (R) Field Effect Transistor Description The 10195 is an internally matched 125-watt goldmos FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Ful...
Description	125 Watts 869-894 MHz goldmos Field Effect Transistor 125 Watts, 869-894 MHz goldmos Field Effect Transistor
File Size	327.44K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10043
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10043 is an internally matched goldmos FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nit...
Description	12 Watts/ 1.9-2.0 GHz goldmos Field Effect Transistor 12 Watts, 1.9-2.0 GHz goldmos Field Effect Transistor 12 Watts, 1.9.0 GHz goldmos Field Effect Transistor
File Size	234.06K / 6 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210901 PTF210901E
OCR Text	...1 is an internally matched 90 W goldmos FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Two-Carrier WCDMA Drive-Up VDD = 28 V, IDQ = 1050 mA, f1 = 2140 ...
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
File Size	262.17K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTF211301 PTF211301A
OCR Text	... is a 130-W, internally matched goldmos FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. ...
Description	LDMOS RF POWER FIELD EFFECT TRANSISTOR 130 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
File Size	444.92K / 9 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF080601F PTF080601E PTF080601A PTF080601
OCR Text	...1 is a 60-W, internally matched goldmos FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spe...
Description	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
File Size	293.07K / 6 Page	View it Online	Download Datasheet

				ERICSSON POWER MODULES AB Ericsson Microelectronics
Part No.	PTF10020
OCR Text	...tf 10020 125 watts, 860C960 mhz goldmos ? field effect transistor 0 25 50 75 100 125 150 01234567 input power (watts) output power (watts ) v dd = 28 v i dq = 1.4 a total typical output power vs. input power 900 mhz 960 mhz 860 mhz pa...
Description	2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz goldmos Field Effect Transistor 125 Watts, 86060 MHz goldmos Field Effect Transistor
File Size	313.64K / 6 Page	View it Online	Download Datasheet

For goldmos Found Datasheets File :: 158 Search Time::1.438ms
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