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DD200GB BU606 B8050 0150CT TSG601 DTA114 T9G02212 LPB352
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    NVB60N06T4G

ON Semiconductor
Part No. NVB60N06T4G
OCR Text ...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av...
Description Power MOSFET 60 V, 60 A, N?Channel D2PAK

File Size 152.01K  /  9 Page

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    MTP75N06HD

ON SEMICONDUCTOR
Part No. MTP75N06HD
OCR Text ...ce data is difficult to use for calculating rise and fall because drain?gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ...
Description 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 127.21K  /  8 Page

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    MTB33N10ET4

ON SEMICONDUCTOR
Part No. MTB33N10ET4
OCR Text ...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av...
Description 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 260.46K  /  10 Page

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    MTD2955V MTD2955VT4G MTD2955V-1 MTD2955V-1G MTD2955VG MTD2955VT4

ON Semiconductor
Part No. MTD2955V MTD2955VT4G MTD2955V-1 MTD2955V-1G MTD2955VG MTD2955VT4
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) ca...
Description Power MOSFET 12A, 60V P-Channel DPAK

File Size 71.58K  /  10 Page

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    MMDF7N02ZR2

ON Semiconductor
Part No. MMDF7N02ZR2
OCR Text ...ce data is difficult to use for calculating rise and fall because drain?gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ...
Description MMDF7N02ZR2
Power MOSFET 7 Amps, 20 Volts N?Channel SO?, Dual

File Size 255.23K  /  12 Page

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    NTD70N03R1

ON SEMICONDUCTOR
Part No. NTD70N03R1
OCR Text ...ce data is difficult to use for calculating rise and fall because drain-gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av) ...
Description 32 A, 25 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 72.62K  /  8 Page

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    AN939

Microchip Technology Inc.
Part No. AN939
OCR Text ... RTC provides a time source for calculating and tracking current and historical peak demand. All metered data is securely stored as it is updated in nonvolatile memory. The design discussed here uses the PIC16F873A and two Current Transform...
Description Designing Energy Meters with the PIC16F873A

File Size 390.82K  /  18 Page

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    NTD3055L170T4

ON Semiconductor
Part No. NTD3055L170T4
OCR Text ...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av...
Description Power MOSFET 9 Amps, 60 Volts, Logic Level N Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 9 A, 60 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 121.12K  /  6 Page

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    NTD20N06LG NTD20N06L-1G NTD20N06LT4G NTDV20N06LT4G

ON Semiconductor
Part No. NTD20N06LG NTD20N06L-1G NTD20N06LT4G NTDV20N06LT4G
OCR Text ...ce data is difficult to use for calculating rise and fall because drain ? gate capacitance varies greatly with applied voltage. accordingly, gate charge data is used. in most cases, a satisfactory estimate of average input current (i g(av...
Description Power MOSFET 20 Amps, 60 Volts Logic Level, N?Channel DPAK

File Size 124.08K  /  8 Page

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