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  bipolar transistor 15v 1a low Datasheet PDF File

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    AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-31033-BLK AT-31033-TR1
Description TERM BLOCK HDR 5.08MM 3POS PCB
low Current/ High Performance NPN Silicon bipolar transistor
low Current High Performance NPN Silicon bipolar transistor
low Current, High Performance NPN Silicon bipolar transistor

File Size 121.09K  /  10 Page

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    2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD

UTC
ROHM[Rohm]
Part No. 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC47261 2SC58241 2SC58661 2SC58761 2SD1383K1 2SD16641 2SD18981 2SD20981 2SD2114K1 2SD26721 2SK20941 2SK25031 2SK25041 2SK27151 2SK30181 2SK30191 2SK30501 2SK35411 4N60-TA3-T 4N60-TF3-T 4N60L-TA3-T
Description -3A / -12V bipolar transistor
-2A / -30V bipolar transistor
High-gain Amplifier transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier transistor (120V, 50mA)
High-Frequency Amplifier transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier transistor (32V , 0.3A)
Medium Power transistor (32V, 1a)
Power transistor (80V, 1a)
low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power transistor (20V, 0.5A)
low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET

File Size 93.04K  /  3 Page

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    CT30SM-12 CT30SM-1

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT30SM-12 CT30SM-1
Description MITSUBISHI INSULATED GATE bipolar transistor GENERAL INVERTER UPS USE
Integrated Gate bipolar transistor (IGBT) Modules: 250V
GENERAL INVERTER . UPS USE

File Size 35.85K  /  3 Page

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    IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15

International Rectifier
Part No. IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15
Description INSULATED GATE bipolar transistor
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
   INSULATED GATE bipolar transistor

File Size 647.10K  /  10 Page

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    CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305

CENTRAL[Central Semiconductor Corp]
Part No. CZT3055 CZT3055NPN CZT2955PNP CZT2955 CZT305
Description SMD bipolar Power transistor NPN General Purpose Amplifier/Switch
SMD bipolar Power transistor PNP General Purpose Amplifier/Switch
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER transistor

File Size 72.36K  /  2 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT40G121
Description Insulated Gate bipolar transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT

File Size 139.45K  /  5 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description Insulated Gate bipolar transistor N-Channel
Insulated Gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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    STC03DE170HP07 STC03DE170HP

ST Microelectronics
STMicroelectronics
Part No. STC03DE170HP07 STC03DE170HP
Description Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W

File Size 256.65K  /  9 Page

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    STC03DE170HV07 STC03DE170HV

ST Microelectronics
STMicroelectronics
Part No. STC03DE170HV07 STC03DE170HV
Description Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W

File Size 229.70K  /  9 Page

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    HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A
Description TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP bipolar 45V SOT323
transistor | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
transistor PNP bipolar 45V SOT23

File Size 156.76K  /  6 Page

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