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intel
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| Part No. |
P28F010 28F010 29066301
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| OCR Text |
...010 and 28F020 allow in-circuit alterability; this eliminates unnecessary handling and less reliable
28F010/28F020
socketed connections, while adding greater test, manufacture, and update flexibility. Material and labor costs associat... |
| Description |
IC,EEPROM,FLASH,128KX8,CMOS,DIP,32PIN,PLASTIC
5 Volt Bulk Erase Flash Memory
From old datasheet system
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| File Size |
737.30K /
47 Page |
 View
it Online |
Download Datasheet
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Atmel
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| Part No. |
AT45DB1282 DOC2472
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| OCR Text |
.... EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modifywrite operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface,... |
| Description |
128M bit, 2.7-Volt Only Dual-Interface Flash. RapidS, Rapid8 with two 1056-Byte SRAM Buffers
From old datasheet system
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| File Size |
242.09K /
35 Page |
View
it Online |
Download Datasheet |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
M25PE10 M25PE20 M25PE10-VMP6TG M25PE10-VMP6TP M25PE20-VMN6TP M25PE10-VMN6TP M25PE10-VMN6TG M25PE20-VMP6TP M25PE20-VMN6TG M25PE20-VMP6TG
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| OCR Text |
alterability, 33 MHz SPI Bus, Standard Pin-out
FEATURES SUMMARY
Industrial Standard SPI Pin-out 1 or 2 Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) i... |
| Description |
4 Mbit Uniform Sector, Serial Flash Memory
1 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-alterability, 33 MHz SPI Bus, Standard Pin-out
1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-alterability, 33 MHz SPI Bus, Standard Pin-out
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| File Size |
196.05K /
37 Page |
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it Online |
Download Datasheet |
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Price and Availability
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