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  adoption of fbet process low Datasheet PDF File

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    TY Semiconductor Co., Ltd
Part No. 2SC3649
Description adoption of fbet, MBIT processes High Breakdown Voltage and Large Current Capacity

File Size 564.29K  /  3 Page

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    TY Semicondutor
TY Semiconductor Co., Ltd
Part No. 2SC5310
Description NPN Epitaxial Planar Silicon Transistors
adoption of fbet, MBIT processes. low collector-to-emitter saturation voltage.

File Size 119.99K  /  2 Page

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    TY Semicondutor
TY Semiconductor Co., Ltd
Part No. 2SB1302 SB1302
Description PNP Epitaxial Planar Silicon Transistors
adoption of fbet, MBIT processes. low collector-to-emitter saturation voltage.

File Size 110.31K  /  2 Page

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    VPA07 VPA18 VPA05 VPM06 VPM07 VPM05 VPH06 VPA25 VPA10 VPA13 VPS10 VPA12 VPA15 VPA30 VPH01 VPH03 VPH05 VPM03 VPM03F VPM04

SANYO[Sanyo Semicon Device]
Part No. VPA07 VPA18 VPA05 VPM06 VPM07 VPM05 VPH06 VPA25 VPA10 VPA13 VPS10 VPA12 VPA15 VPA30 VPH01 VPH03 VPH05 VPM03 VPM03F VPM04 VPM04F VPS07 VPS08
Description fbet Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
Hybrid intergrated circuits/with fbet/LSBT process chips/Wide bandwidth video output ICs

File Size 340.82K  /  2 Page

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    TY Semicondutor
TY Semiconductor Co., Ltd
Part No. 2SC3646
Description High-Voltage Switching Applications
adoption of fbet, MBIT processes High Breakdown Voltage and Large Current Capacity

File Size 561.11K  /  3 Page

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    2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN

ON Semiconductor
Part No. 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN
Description Bipolar Transistor
Bipolar Transistor adoption of fbet, MBIT processes
Bipolar Transistor ?0V, ?A, low VCE(sat) PNP Single PCP

File Size 634.11K  /  8 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4601
Description Surface mount type device making the following possible. adoption of MBIT process.

File Size 167.68K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4003
Description High breakdown voltage adoption of MBIT process Excellent hFE linearity

File Size 70.81K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4548
Description High Breakdown Voltage adoption of MBIT process Excellent hFE Linearlity.

File Size 446.97K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. 2SC4390
Description adoption of MBIT process. High DC current gain (hFE=800 to 3200).

File Size 209.33K  /  2 Page

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