96w pdf Datasheet P3 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : B8850 HSMA5818 NTE15 50A02MH C100LVE SMP402SC M65575FP KBPC10
	Product Description
	Full Text Search

96w Datasheet PDF File

For 96w Found Datasheets File :: 2545 Search Time::23.625ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5020BLC APT5020SLC
OCR Text	...X UNIT 2500 520 100 70 17 40 9 14 22 15 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn...6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 26 104 1....
Description	POWER MOS VI 500V 26A 0.200 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.78K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text	... 25C Tj = 25C Tj = 125C 1.9 6 15 26 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.47 40 3 See MIL-STD-750 Metho...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M38JFLL
OCR Text	...5C Tj = 25C Tj = 125C 2.2 9.0 16 33 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.39K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT50M38JLL
OCR Text	...) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0....
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.38K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text	...Ohms A nA Volts 050-7117 Rev - 9-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 ...6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 71 284 1.3 15 300 600...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50M50JLC APT5010JLC
OCR Text	...) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0....
Description	POWER MOS VI 500V 77A 0.050 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50L2FLL
OCR Text	... Ohms A nA Volts 050-7115 Rev- 9-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 ...6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 89 356 1.3 15 300 600...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.74K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50L2LL
OCR Text	... 9840 2030 150 245 65 25 16 51 9 nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Dela...6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 87 348 1.3 ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	50.41K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8011JLL APT8011
OCR Text	...Ohms A nA Volts 050-7093 Rev - 9-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 ...6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 51 204 1.3 ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.67K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8011 APT8011JFLL
OCR Text	...Ohms A nA Volts 050-7094 Rev - 9-2001 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 ...6W MIN TYP MAX UNIT pF 10020 1930 317 369 48 209 23 23 83 19 ns nC Gate-Source Charge Gate-Dr...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.29K / 2 Page	View it Online	Download Datasheet

For 96w Found Datasheets File :: 2545 Search Time::23.625ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |