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Niko-Sem
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| Part No. |
P5504EDG
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| OCR Text |
....5V, ID = -6A VGS = -10V, ID = -8a VDS = -10V, ID = -8a DYNAMIC
65 38 11
94 55
m S
Input Capacitance Output Capacitance Reverse ...p-channel Enhancement Mode Field Effect Transistor
P5504EDG
TO-252 Halogen-Free & Lead-Free
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| Description |
p-channel Logic Level Enhancement
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| File Size |
410.02K /
4 Page |
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it Online |
Download Datasheet
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Nexperia
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| Part No. |
PMV16UN
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| OCR Text |
... gs =4.5v; t amb =25c [1] --5 . 8a static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =5.8a; t j =25c - 1 51 ...p 10 s - 25 a p tot total power dissipation t amb =25c [2] - 510 mw [1] - 930 mw t sp = 25 c - 4170... |
| Description |
20 V, 5.8 A N-channel Trench MOSFET
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| File Size |
221.14K /
17 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics...
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| Part No. |
STM8362
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| OCR Text |
... i d r ds(on) (m ) max -40v -5.8a 60 @ vgs=-4.5v 38 @ vgs=-10v -40 -5.8 -21 20 p-channel t c =70 c a 5.3 -4.6 1.28 w t c =70 c c/w 30 36 ver 1.1 so-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 green product
4 symbol min typ max ... |
| Description |
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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| File Size |
153.18K /
11 Page |
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it Online |
Download Datasheet
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Price and Availability
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