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SGS Thomson Microelectronics
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| Part No. |
AN891
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| OCR Text |
...
Vimin T dc 100 32 0.5 = 3.76a = LP 425
PR18 =
V2C10
R18
=
1002 = 0.45W 22000
The transformer turn ratio between primary and
4/14
When all the outputs are open, at no load, this
AN891 APPLICATION NOTE
power c... |
| Description |
SMPS WITH L4990 FOR MULTISYNC MONITORS
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| File Size |
121.78K /
14 Page |
 View
it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M40LVFR APT10086BVFR_05
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| OCR Text |
76a 0.040
POWER MOS V (R)
FREDFET
TO-264
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resi... |
| Description |
POWER MOS V 300V 76a 0.040 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
66.01K /
4 Page |
View
it Online |
Download Datasheet |
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NXP Semiconductors N.V.
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| Part No. |
PSMN7R0-30YL
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| OCR Text |
...25c; v gs =10v; see figure 1 --76a p tot total power dissipation t mb = 25 c; see figure 2 --51w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =10v; i d =15a; t j =25c -4.927m ... |
| Description |
N-channel 30 V 7 m logic level MOSFET in LFPAK
N-channel 30 V 7 m? logic level MOSFET in LFPAK
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| File Size |
199.79K /
14 Page |
View
it Online |
Download Datasheet |
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