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520v Datasheet PDF File

For 520v Found Datasheets File :: 369 Search Time::1.578ms
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				Alpha & Omega Semiconductors
Part No.	AOTF18N65
OCR Text	...totalgatecharge v gs =10v,v ds =520v,i d =18a dynamic parameters v ds =5v, i d =250 m a v ds =520v,t j =125c v ds =0v,v gs =30v v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c zerogatevoltagedraincurr...
Description	650V,18A N-Channel MOSFET
File Size	356.80K / 5 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOTF18N65
OCR Text	...totalgatecharge v gs =10v,v ds =520v,i d =18a dynamic parameters v ds =5v, i d =250 m a v ds =520v,t j =125c v ds =0v,v gs =30v v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c zerogatevoltagedraincurr...
Description	650V,18A N-Channel MOSFET
File Size	417.76K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOK18N65
OCR Text	...v ds =5v, i d =250 m a v ds =520v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v maximum body-diode pul...
Description	650V,18A N-Channel MOSFET
File Size	444.47K / 5 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOK18N65
OCR Text	...v ds =5v, i d =250 m a v ds =520v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c zero gate voltage drain current id=250 a, vgs=0v maximum body-diode pul...
Description	650V,18A N-Channel MOSFET
File Size	530.72K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOWF10N65 AOW10N65
OCR Text	...al gate charge v gs =10v, v ds =520v, i d =10a gate source charge gate drain charge switching parameters i dss zero gate voltage drain current v ds =650v, v gs =0v diode forward voltage v ds =5v i d =250 m a v ds =520v, t j =125c i s =1a...
Description	650V,10A N-Channel MOSFET
File Size	338.79K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFB9N65A IRFB9N65
OCR Text	...DS = 650V, VGS = 0V A 250 VDS = 520v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- R...
Description	Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A) HEXFET? Power MOSFET Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)
File Size	98.70K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFB9N65APBF
OCR Text	...??? 48 ??? v gs = 0v, v ds = 520v, ? = 1.0mhz c oss eff. effective output capacitance ??? 84 ??? v gs = 0v, v ds = 0v to 520v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalan...
Description	HEXFET Power MOSFET
File Size	153.63K / 8 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	SWF7N65
OCR Text	... =650v, v gs =0v - - 1 ua v ds =520v, t c =125 o c - - 20 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th...
Description	N-channel MOSFET
File Size	771.85K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFIB5N65 IRFIB5N65A
OCR Text	...CCC 48 CCC v gs = 0v, v ds = 520v, ? = 1.0mhz c oss eff. effective output capacitance CCC 84 CCC v gs = 0v, v ds = 0v to 520v ? dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanc...
Description	650V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=5.1A)
File Size	108.28K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFB9N65 IRFB9N65A
OCR Text	...DS = 650V, VGS = 0V A 250 VDS = 520v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- R...
Description	Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A) 650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	107.63K / 8 Page	View it Online	Download Datasheet

For 520v Found Datasheets File :: 369 Search Time::1.578ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |