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  48.0v Datasheet PDF File

For 48.0v Found Datasheets File :: 3322    Search Time::0.938ms    
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    Micross Components
Part No. ICE13N65FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 13a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 748.98K  /  4 Page

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    Micross Components
Part No. ICE11N70
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 108 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 761.67K  /  4 Page

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    Micross Components
Part No. ICE11N70FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 108 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m...
Description N-Channel Enhancement Mode MOSFET

File Size 756.33K  /  4 Page

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    Micross Components
Part No. ICE11N65FP
OCR Text ...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ...
Description N-Channel Enhancement Mode MOSFET

File Size 746.16K  /  4 Page

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    HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A
OCR Text ...oC TC = 150oC MIN 600 3.0 VCE = 480V VCE = 600V 42 35 TYP 1.8 2.1 5.1 7.7 23 30 26 21 130 60 160 120 MAX 100 3.0 2.1 2.4 6.0 100 28 37 160 80 200 200 UNITS V A mA V V V nA A A V nC nC ns ns ns ns J J Collector to Emitter Breakdown Voltag...
Description 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB

File Size 158.34K  /  8 Page

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    HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412
OCR Text ...TC = 150oC MIN 600 15 3.0 VCE = 480V VCE = 600V 42 35 TYP 28 1.8 2.1 5.1 MAX 100 2.0 2.1 2.4 6.0 100 UNITS V V A mA V V V nA A A Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage C...
Description From old datasheet system
14A 600V UFS Series N-Channel IGBTs
14A, 600V, UFS Series N-Channel IGBTs

File Size 91.85K  /  7 Page

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    HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D
OCR Text ...C3DS 600 14 7 8 56 20 30 40A at 480V 60 0.487 -40 to 150 260 1 8 UNITS V A A A A V V W W/oC oC oC s s (c) Harris Corporation 1997 File Number 4150.1 3-22 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Electrical Specifications ...
Description 3.3V 72-mc CPLD
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

File Size 197.06K  /  7 Page

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    HGTD7N60C3S HGTP7N60C3 FN4141

INTERSIL[Intersil Corporation]
Part No. HGTD7N60C3S HGTP7N60C3 FN4141
OCR Text ... . tSC 600 14 7 56 20 30 40A at 480V 60 0.48 100 -40 to 150 260 1 8 UNITS V A A A V V W W/oC mJ oC oC s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only ...
Description 3.3V 72-mc CPLD
14A, 600V, UFS Series N-Channel IGBTs
14A 600V UFS Series N-Channel IGBTs
From old datasheet system

File Size 143.46K  /  7 Page

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    HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S

Fairchild Semiconductor Corporation
HARRIS[Harris Corporation]
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S
OCR Text .... . . . . . . . . . SSOA 40A at 480V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . ....
Description 3.3V 72-mc CPLD
14A 600V UFS Series N-Channel IGBTs
14A, 600V, UFS Series N-Channel IGBTs
14A/ 600V/ UFS Series N-Channel IGBTs

File Size 153.41K  /  6 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ...V, VGS = 0V A --- --- 250 VDS = 480V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Min. 14 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 27 110 43 38 4660 460 41 5490 120 250 Max. Units Con...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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For 48.0v Found Datasheets File :: 3322    Search Time::0.938ms    
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