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  35.8a Datasheet PDF File

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    SANYO[Sanyo Semicon Device]
Part No. CPH5815
OCR Text ...ee specified Test Circuit. 15 0.35 0.4 20 10 0.41 0.46 200 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Cos...8A ID=--0.8A, VGS=-4.5V ID=--0.4A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=--6V, f=1MHz VDS=--6V, f=1MHz ...
Description Pch SBD
DC / DC Converter Applications

File Size 39.76K  /  5 Page

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    DYNEX[Dynex Semiconductor]
Part No. DG758BX45
OCR Text ...e Clamping force Clamping force 35.0kN With mounting compound per contact Min. -40 -40 33.0 Max. 0.0146 0.0233 0.0392 0.0036 125 125 37.0 Un...8A d.c. VDRM = 4500V, VRG = 0V At VRRM VD = 24V, IT = 100A, Tj = 25oC VD = 24V, IT = 100A, Tj = 25oC...
Description Gate Turn-off Thyristor

File Size 220.66K  /  19 Page

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    PHM017-3

Polyfet RF Devices
Part No. PHM017-3
OCR Text ...d, Vagc=5Vdc, Idq=.8A 47 43 39 35 31 27 23 19 15 450 460 30.6 35 30 25 20 15 10 5 0 390 Gain Gain Pout 30.2 Pout fixed at 10W Efficiency @10W = 25% 29.4 29 0.020 Efficiency 400 410 420 430 440 Freq in MHz ...
Description Power RF Amplifiers

File Size 31.34K  /  2 Page

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    AOD60608

Alpha & Omega Semiconductors
Part No. AOD60608
OCR Text ...haracteristics i d (a) 20 25 30 35 40 45 50 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ...8a 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source v...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 237.80K  /  11 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOD603A
OCR Text ... pf c rss 16 27 40 pf r g 0.6 1.35 2 w q g (10v) 7.5 10 nc q g (4.5v) 3.8 5 nc q gs 1.2 nc q gd 1.9 nc t d(on) 4.2 ns t r 3.4 ns t d(off) 16...8a v gs =10v, v ds =30v, r l =2.5 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off...
Description 60V Complementary MOSFET

File Size 1,003.86K  /  11 Page

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    ELM34401AA-N

ELM Technology Corporation
Part No. ELM34401AA-N
OCR Text ...ce rds(on) vgs=-10v, id=- 8a 28 35 m 1 vgs =- 4.5v, id =-6 a 44 60 m forward transconductance gfs vds =-1 0v, id =-6 a 7 s 1 diode forward voltage vsd is =- 1a, vgs=0v -1 v 1 max. body -diode continuous current is -3 a pulsed body -diode cu...
Description Single P-channel MOSFET

File Size 353.30K  /  4 Page

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    SC284

Semtech Corporation
Part No. SC284
OCR Text ... 0.4% 0.6% 0.8% 1.0% -40 -15 10 35 60 85 ambient temperature (c) variation i out = 0a uvlo hysteresis variation -5% -4% -3% -2% -1% 0% 1% 2%...8a typical waveforms circuit conditions: c in = 0uf/6.3v; c out = 22uf/6.3v, l= 2.2uh (toko: ...
Description Dual Channel 2.5MHz, 1.8A Synchronous Step-Down Regulator

File Size 1,773.33K  /  20 Page

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    PQ-100D PQ-10010 PQ-100E

Mean Well Enterprises Co., Ltd.
Part No. PQ-100D PQ-10010 PQ-100E
OCR Text ...n1 1 13 3 5 4- 3.96 46 12 2 4 6.35 6.35 dc output connector (cn2) : molex 5273-06,07 or equivalent pin no. 1,2,3 4,5,6,7 8,9 10 11 12 13 assignment v1 com v2 power good(option) v3 no pin v4 mating housing molex 5195 or equivalent terminal m...
Description 100W Quad Output Switching Power Supply

File Size 664.67K  /  3 Page

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    2SK3101 2SK3101LS

Sanyo Semicon Device
Part No. 2SK3101 2SK3101LS
OCR Text ...Ratings min typ 1850 480 240 19 35 140 41 58 0.9 1.2 max Unit pF pF pF ns ns ns ns nC V Package Dimensions unit : mm 2078C 10.0 3.2 4.5 ...8A RL=25 VOUT DUT D PW=1s D.C.0.5% 10V 0V 50 VDD G P.G RGS 50 2SK3101LS ...
Description High Output MOSFETs
General-Purpose Switching Device Applications

File Size 41.15K  /  5 Page

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    W16NB60

STMicroelectronics
Part No. W16NB60
OCR Text ...r ds(on) i d stw16nb60 600v < 0.35 w 16 a symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r ...8a 0.3 0.35 w symbol parameter test conditions min. typ. max. unit g fs forward transconductance v d...
Description Search --To STW16NB60

File Size 203.28K  /  8 Page

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