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  30adc Datasheet PDF File

For 30adc Found Datasheets File :: 32    Search Time::1.328ms    
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    SED30KW600 SED30KE600

SSDI[Solid States Devices, Inc]
Part No. SED30KW600 SED30KE600
OCR Text ... oC TA = 125 oC IF = 20ADC IF = 30adc PRELIMINARY SOLID STATE DEVICES, INC. SYMBOL VF1 VF2 BVR IR1 IR2 CJ tRR 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 VALUE 1.15 1.30 600 0.50 5 ...
Description 30 AMP 600 VOLTS HYPER FAST RECTIFIER

File Size 55.67K  /  2 Page

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    MRFE6VP61K25HSR6 MRFE6VP61K25HR6 MRFE6VP61K25HR612

Freescale Semiconductor, Inc
Part No. MRFE6VP61K25HSR6 MRFE6VP61K25HR6 MRFE6VP61K25HR612
OCR Text ...nsconductance (v ds =10vdc,i d =30adc) g fs ? 28.0 ? s dynamic characteristics (4) reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.8 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0v...
Description RF Power LDMOS Transistors

File Size 1,167.79K  /  21 Page

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    MICROSEMI[Microsemi Corporation]
Part No. JANTX2N5302 2N5302 JANTXV2N5303 2N5303 JANTX2N5303 JANTXV2N5302
OCR Text ...0 Adc, IB = 4.0 Adc 2N5303 IC = 30adc, IB = 6.0 Adc 2N5302 DYNAMIC CHARACTERISTICS Magnitude of Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 k...
Description NPN HIGH POWER SILICON TRANSISTOR

File Size 56.72K  /  2 Page

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    MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 SUCOFORM250--01 C3225JB2A105KT TC--12 TC--350 HANDWOUN

Freescale Semiconductor, Inc
Freescale Semiconductor...
Part No. MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 SUCOFORM250--01 C3225JB2A105KT TC--12 TC--350 HANDWOUND HMK432B7225KM--T MCGPR100V477M16X32--RH ATC100B102KT50XT ATC100B150JT500XT C4532X7R1H685K ATC100B471JT200XT
OCR Text ...nsconductance (v ds =10vdc,i d =30adc) g fs ? 28.0 ? s dynamic characteristics (4) reverse transfer capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.8 ? pf output capacitance (v ds =50vdc ? 30 mv(rms)ac @ 1 mhz, v gs =...
Description RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
   RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

File Size 855.06K  /  23 Page

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