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  200a 800v Datasheet PDF File

For 200a 800v Found Datasheets File :: 606    Search Time::1.25ms    
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    FQP3N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQP3N80
OCR Text ...g TJ = 25C 3. ISD 3.0A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description 800v N-Channel MOSFET

File Size 651.48K  /  8 Page

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    IRG4PH50UD IRG4PH50

IRF[International Rectifier]
Part No. IRG4PH50UD IRG4PH50
OCR Text ...nC TJ = 25C See Fig. 16 di/dt = 200a/s 1838 TJ = 125C -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH50UD 30 25 F o...800v 4.20 IC = 48 A 10 IC = 24 A IC = 12 A 3.80 3.40 3.00 0 10 20 30 40 50 ...
Description 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)

File Size 226.41K  /  10 Page

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    IRGPH40FD2

IRF[International Rectifier]
Part No. IRGPH40FD2
OCR Text ...e Fig. 880 TJ = 125C 16 di/dt = 200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Pulse width 5.0s, single shot. Notes: Repetitive rating; ...800v = 15V = 25C = 17A 100 RG = 10 V GE = 15V V CC = 800v I C = 34A I C = 17A 8.5 8.4 ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)

File Size 380.38K  /  8 Page

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    QM150DY-3H QM150

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM150DY-3H QM150
OCR Text ... (sat) (V) 5 ton, ts, tf (s) IC=200a 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ts 10 1 7 5 4 3 2 10 0 7 5 4 3 10 1 3 ...800v IB1=-IB2=3A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 IC (A) BASE CURRENT IB (A) COLLE...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 77.04K  /  5 Page

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    FQA10N80

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA10N80
OCR Text ...g TJ = 25C 3. ISD 9.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description CAPACITOR KIT, AUTOMOTIVE, AECQ 200; Kit contents:24 Values RoHS Compliant: Yes
800v N-Channel MOSFET

File Size 674.28K  /  8 Page

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    FQAF10N80

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF10N80
OCR Text ...g TJ = 25C 3. ISD 9.8A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2002 Fairchild Semiconductor Corporation Rev. A1, April 200...
Description CAPACITOR KIT, FLEXITERM MLCCCAPACITOR KIT, FLEXITERM MLCC; Kit contents:30 Values 6.7 A, 800 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET
800v N-Channel MOSFET

File Size 697.39K  /  8 Page

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    IHW20T120

INFINEON[Infineon Technologies AG]
Part No. IHW20T120
OCR Text ... voltage (VGE=0V, f = 1 MHz) 200a IC(sc), short circuit COLLECTOR CURRENT SHORT CIRCUIT WITHSTAND TIME 15s 175A 150A 125A 100A 75A 50A 25A 0A 12V 14V 16V 18V 10s 5s tSC, 0s 12V 14V 16V VGE, GATE-EMITTETR VO...
Description IGBTs & DuoPacks - 20A / 1200V IGBT and 9A / 1200V Diode in DuoPack
Soft Switching Series

File Size 316.12K  /  14 Page

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    MCC[Micro Commercial Components]
Part No. HER308 HER305 HER301 HER302 HER303 HER304 HER306 HER307 ER307
OCR Text ... Cycle 1% 1.0V 1.3V 1.7V 10A 200a IFM = 3.0A; TA = 25C DIMENSIONS INCHES MIN ----.048 1.000 MM MIN ----1.20 25.40 DIM A B C D MAX .370 .250 .052 --- MAX 9.50 6.40 1.30 --- NOTE www.mccsemi.com HER301 THRU HER308 RA...
Description 3.0 Amp High Efficient Rectifiers 50 to 1000 Volts

File Size 88.47K  /  2 Page

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    IRG4PH40UD IRG4PH40UD-E

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40UD IRG4PH40UD-E
OCR Text ...e Fig. 880 TJ = 125C 16 di/dt = 200a/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 2 www.irf.com IRG4PH40UD 25 For both: 20 LO...800v VGE = 15V TJ = 25 C I C = 21A 100 RG = 10 Ohm VGE = 15V VCC = 800v IC = 42 A 10 ...
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package

File Size 217.13K  /  10 Page

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    Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FQD2N80 FQU2N80 FQD2N80TF FQD2N80TM FQU2N80TU
OCR Text ...g TJ = 25C 3. ISD 2.4A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description 800v N-Channel MOSFET
TRANSISTOR|MOSFET|N-CHANNEL|800vV(BR)DSS|1.8AI(D)|TO-252AA
800v N-Channel QFET

File Size 637.66K  /  9 Page

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