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Samsung semiconductor
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Part No. |
K7Q161852A
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OCR Text |
...ntrol Pin to Byte Wrtie Control 2) Page 7 STATE DIAGRAM from LEAD NOP to READ NOP 1. Amendment 1) Page 8 WRITE TRUTH TABLE(x36) BW2,BW3 valu...5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E, 6F... |
Description |
512Kx36 & 1Mx18 QDRTM b2 SRAM
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File Size |
356.76K /
17 Page |
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Samsung semiconductor
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Part No. |
K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13
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OCR Text |
...ntrol Pin to Byte Wrtie Control 2) Page 7 STATE DIAGRAM from LEAD NOP to READ NOP 1. Amendment 1) Page 8 WRITE TRUTH TABLE(x36) BW2,BW3 valu...5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E, 6F... |
Description |
512Kx36-bit, 1Mx18-bit QDR SRAM
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File Size |
359.88K /
17 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
K7R161882B K7R163682B K7R160982B
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OCR Text |
...e the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change the JTAG Block diagram 1. Change the DC ch...5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,... |
Description |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36
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File Size |
425.70K /
19 Page |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R161884B-FC25 K7R161884B-FC30 K7R163684B K7R163684B-FC16 K7R163684B-FC20 K7R163684B-FC25 K7R163684B-FC30 K7R320982M
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OCR Text |
...e the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram 1. Add the speed bin (-...5G,7G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 2A,10A,4C,8C,4D-8D,5E-7E,6F,... |
Description |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
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File Size |
415.94K /
18 Page |
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Galvantech
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Part No. |
GVT71256B36 GVT71512B18 71256B36
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OCR Text |
...nous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a po...5G 3g 3L 4M 4H 93 94 95 96 87 88
InputAddresses: These inputs are registered and must meet the se... |
Description |
256K X 36/512K X 18 SYNCHRONOUS SRAM From old datasheet system
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File Size |
255.58K /
25 Page |
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Galvantech
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Part No. |
GVT71256C36 GVT71512C18 71256C36
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OCR Text |
... * * * * * * Fast access times: 2.5ns, 3.0ns, and 3.5ns Fast clock speed: 225, 200, 166, and 150MHz Fast OE# access times: 2.5ns, 3.0ns, and...5G 3g 3L 4M 4H 93 94 95 96 87 88
InputAddresses: These inputs are registered and must meet the se... |
Description |
256K X 36/512K X 18 SYNCHRONOUS SRAM From old datasheet system
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File Size |
255.50K /
25 Page |
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Galvantech
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Part No. |
GVT71256D18 71256D18
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OCR Text |
... -5% and +10% core power supply 2.5V or 3.3V I/O supply 5V tolerant inputs except I/O's Clamp diodes to VSSQ at all inputs and outputs Commo...5G, 3H, 5H, 3K, 5K, 3L, 3M, 5M, 3N, 5N, 3P, 5P 1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U 74, 24 15, 41,... |
Description |
256K X 18 SYNCHRONOUS BURST SRAM From old datasheet system
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File Size |
173.28K /
14 Page |
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Galvantech
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Part No. |
GVT71256D36 71256D36
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OCR Text |
... * * * * * * Fast access times: 2.5ns, 3.0ns, and 3.5ns Fast clock speed: 225, 200, 166, and 150MHz Fast OE# access times: 2.5ns, 3.0ns, and...5G 3g 3L 4M 4H 93 94 95 96 87 88
InputAddresses: These inputs are registered and must meet the se... |
Description |
256K X 36/512K X 18 SYNCHRONOUS SRAM From old datasheet system
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File Size |
256.13K /
25 Page |
View
it Online |
Download Datasheet
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