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  2 048-bit Datasheet PDF File

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    KS24C010 KS24C021 KS24C011 KS24C020

SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KS24C010 KS24C021 KS24C011 KS24C020
Description 1.024 / 2.048-bit SERIAL EEPROM
1,024/2,048-bit serial eeprom 1,024 / 2,048位串行EEPROM
(KS24C010 / KS24C011 / KS24C020 / KS24C021) 1024/2048-bit serial eeprom

File Size 293.00K  /  24 Page

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    MSC2313258D-XXDS2 MSC2313258D-XXBS2 MSC2313258D MSC2313258D-60BS2 MSC2313258D-60DS2

OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
Oki Electric Industry Co., Ltd.
Part No. MSC2313258D-XXDS2 MSC2313258D-XXBS2 MSC2313258D MSC2313258D-60BS2 MSC2313258D-60DS2
Description From old datasheet system
1M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72
1,048,576-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 1,048,576字32位动态随机存储器模块:快速页面模式型与江

File Size 41.85K  /  9 Page

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    GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C18163CL-7 GM71C18163CJ-6

HYNIX[Hynix Semiconductor]
Part No. GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C18163CL-7 GM71C18163CJ-6
Description 1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

File Size 110.98K  /  11 Page

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    Laird Technologies, Inc.
SPANSION LLC
Part No. AM29F080 AM29F080-85FC
Description Am29F080 - 8 Megabit (1.048.576 x 8-Bit) CMOS 5.0 Volt-only. Sector Erase Flash Memory Am29F080 - 8兆(1.048.576 × 8位)的CMOS 5.0伏特只。扇区擦除闪
1M X 8 FLASH 5V PROM, 85 ns, PDSO40

File Size 141.17K  /  39 Page

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    THM321000S-10 THM321000S-80 THM321000SG-10 THM321000SG-80

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. THM321000S-10 THM321000S-80 THM321000SG-10 THM321000SG-80
Description Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE

File Size 483.22K  /  17 Page

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    Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
Part No. AM29F800T-70 AM29F800T-90 AM29F800T-150SEB AM29F800T-150SIB AM29F800T-150SCB AM29F800T-90ECB AM29F800T-70ECB AM29F800T-120EC AM29F800T-150ECB AM29F800T-120ECB AM29F800B-70 AM29F800B-70EC AM29F800B-70FE AM29F800B-70FEB AM29F800B-90FE AM29F800B-120FCB AM29F800B-120FEB AM29F800B-120SCB AM29F800B-120FIB AM29F800B-120ECB AM29F800B-120EEB AM29F800B-120EIB AM29F800B-70EEB AM29F800B-90EEB AM29F800B-90EIB AM29F800B-150FCB AM29F800B-70FCB AM29F800B-150FIB AM29F800B-90FIB AM29F800B-150SEB AM29F800B-90SIB AM29F800B-70FIB AM29F800B-150EIB AM29F800B-150EEB AM29F800B-70EIB AM29F800B-120SIB AM29F800B-90FCB AM29F800B-120SEB AM29F800B-150SIB AM29F800B-70SIB AM29F800B-70SEB AM29F800B-90SEB AM29F800B-90ECB AM29F800B-90SC AM29F800B-150EC AM29F800T-150EI ADVANCEDMICRODEVICESINC-AM29F800T-120EE AM29F800T-90FE ADVANCEDMICRODEVICESINC.-AM29F800T-90SIB
Description 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 8兆位,048,576 x 8-Bit/52488 x 16位).0伏的CMOS只,扇区擦除闪存
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 16 FLASH 5V PROM, 150 ns, PDSO48

File Size 264.28K  /  41 Page

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    Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
SPANSION LLC
Part No. AM29LV800T AM29LV800T-100 AM29LV800T-120 AM29LV800T-150 AM29LV800T-90R AM29LV800B-100EE AM29LV800B-100EC
Description 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
Am29LV800 - 8 Megabit (1.048.576 x 8-Bit/524.288 x 16-Bit) CMOS 3.0 Volt-only. Sectored Flash Memory
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory
512K X 16 FLASH 3V PROM, 100 ns, PDSO48

File Size 200.63K  /  48 Page

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    HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM5144

Hitachi Semiconductor
Part No. HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
Description 1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns

File Size 231.12K  /  27 Page

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    TC514400AAZL-60 TC514400AJL-60 TC514400APL TC514400APL-60 TC514400ASJL-60 TOSHIBACORPORATION-TC514400AAZL-60

TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
Part No. TC514400AAZL-60 TC514400AJL-60 TC514400APL TC514400APL-60 TC514400ASJL-60 TOSHIBACORPORATION-TC514400AAZL-60
Description 60 ns, 4-bit generation dynamic RAM
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器

File Size 626.71K  /  21 Page

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    THM361020S-10 THM361020S-80 THM361020SG-10 THM361020SG-80

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. THM361020S-10 THM361020S-80 THM361020SG-10 THM361020SG-80
Description Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE

File Size 473.60K  /  17 Page

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