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NXP Semiconductors N.V. Philips
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| Part No. |
PBYL2025BSERIES PBYL2025B/T3 PBYL2020B/T3
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| OCR Text |
...urrent, IF(AV) (A)
150 30
1uA 0 5 10 VR / V 15 20 25
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform whe...IR = f(VR); parameter Tj
15
Forward dissipation, PF (W)
Vo = 0.270 V Rs = 0.00875 Ohms
PBY... |
| Description |
20 A, 20 V, SILICON, RECTIFIER DIODE 20 A, 25 V, SILICON, RECTIFIER DIODE Rectifier diodes Schottky barrier
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| File Size |
37.61K /
5 Page |
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it Online |
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Comchip Technology Co., Ltd.
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| Part No. |
COMCHIPTECHNOLOGYCO.LTD.-CZRB2075 B2017
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| OCR Text |
...bility - typical i less than 1ua above 11v d - high temperature soldering 260c /10 seconds at terminals - plastic package has underwr...ir - ma czrb2011 11 45.5 4 700 0.25 1.0 8.4 166 1.82 czrb2012 12 41.5 4.5 700 0.25 1.0 9.1 152 1.66 ... |
| Description |
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
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| File Size |
95.23K /
5 Page |
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it Online |
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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
SMB10
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| OCR Text |
...ion 94v-o typical ir less than 1ua above 10v fast response time: typically less than 1.0ps for uni-direction,less than 5.0ns for bi-direction,form 0 volts to bv min mechanical data case : molded plastic polarity : by cathode band denotes... |
| Description |
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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| File Size |
49.17K /
4 Page |
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it Online |
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Philips
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| Part No. |
BYC8-600 BYC8-600_5
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| OCR Text |
...urrent, dIF/dt (A/ s)
200
1uA
0
100
200
300 400 Reverse voltage (V)
500
600
Fig.10. Typical forward recovery volt...IR = f(VR); parameter Tj
Transient thermal impedance, Zth j-mb (K/W)
I
F
10
1
time V... |
| Description |
Rectifier diode From old datasheet system
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| File Size |
44.48K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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