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  12d a Datasheet PDF File

For 12d a Found Datasheets File :: 675    Search Time::1.094ms    
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    IRFPC50A

IRF[International Rectifier]
Part No. IRFPC50a
OCR Text ...Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. avalanche Current 6 www.irf.com IRFPC50a Peak Diode Recov...a D a S S IG N M E N TS 1 2 3 4 G a TE DR a IN SOURC E DR a IN -DDBM 5 .3 0 ( .2 0 9 ) 4 .7 0 ...
Description Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11a)

File Size 94.48K  /  8 Page

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    74ABT16952 74ABT16952DGG 74ABT16952DL BH16B952DGG BT16952DGG BT16952DL BH16952DGG BH16952DL 74ABTH16952DGG

NXP Semiconductors N.V.
Philips Semiconductors
Part No. 74aBT16952 74aBT16952DGG 74aBT16952DL BH16B952DGG BT16952DGG BT16952DL BH16952DGG BH16952DL 74aBTH16952DGG
OCR Text ...7 2a0 6 8 9 10 12 13 14 15 9 12d 11D 10 H = High voltage level L = Low voltage level X = Don't care XX = aB or Ba Z = High impedance "off" state 42 2a1 2a2 2a3 2a4 2a5 2a6 2a7 16 17 19 20 21 23 24 41 40 38 37 36 34 33 ...
Description Triple 3-input positive-NOR gates 14-SOIC 0 to 70 aBT SERIES, DUaL 8-BIT REGISTERED TRaNSCEIVER, TRUE OUTPUT, PDSO56
RES, 5.1, 1/4W, TKF, 5%, 1210
16-bit registered transceiver 3-State

File Size 87.58K  /  12 Page

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    74ABT16543 74ABT16543DGG 74ABT16543DL BH16543DGG BH16543DL 74ABTH16543DL 74ABTH16543DGG

Philips Semiconductors
NXP Semiconductors N.V.
Part No. 74aBT16543 74aBT16543DGG 74aBT16543DL BH16543DGG BH16543DL 74aBTH16543DL 74aBTH16543DGG
OCR Text ...7 2a0 6 8 9 10 12 13 14 15 9 12d 11D 10 51 49 48 47 45 44 43 42 1B1 1B2 1B3 1B4 1B5 1B6 1B7 2B0 2a2 GND 2a3 2a4 2a5 VCC 2a6 2a7 GND 2a1 2a2 2a3 2a4 2a5 2a6 2a7 16 17 19 20 21 23 24 41 40 38 37 36 34 33 2B1 2B2 2B3 2...
Description 16-bit latched transceivers with dual enable 3-State 16位锁存使收发器双三

File Size 90.54K  /  12 Page

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    IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC40aS IRFBC40aSTRL IRFBC40aSTRR
OCR Text ...Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. avalanche Current 6 www.irf.com IRFBC40aS Peak Diode Reco...a FTER SO LD E R D IP . 2 D IM EN S IO N IN G &amp; TO LE R aN C IN G P ER aN S I Y1 4.5M , 19 82 . 3 C ...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2a) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2a

File Size 110.34K  /  9 Page

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    IRFBC40A IRFBC40

IRF[International Rectifier]
Part No. IRFBC40a IRFBC40
OCR Text ...Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. avalanche Current 6 www.irf.com IRFBC40a Peak Diode Recov...a D a S S IG N M E N T S 1 - Ga TE 2 - D R a IN 3 - SOURCE 4 - D R a IN 1 4 .0 9 ( .5 5 5 ) 1 3 ....
Description Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2a)

File Size 93.87K  /  8 Page

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    IRF830AL IRF830AS

IRF[International Rectifier]
Part No. IRF830aL IRF830aS
OCR Text ...Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. avalanche Current 6 www.irf.com IRF830aS/L Peak Diode Rec...a FTER SO LD E R D IP . 2 D IM EN S IO N IN G &amp; TO LE R aN C IN G P ER aN S I Y1 4.5M , 19 82 . 3 C ...
Description 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0a)
Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0a)

File Size 152.88K  /  10 Page

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    IRF830A IRF830APBF

International Rectifier, Corp.
Part No. IRF830a IRF830aPBF
OCR Text ...Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. avalanche Current 6 www.irf.com IRF830a Peak Diode Recove...a INTERNaTIONaL RECTIFIER LOGO aSSEMBLY LOT CODE PaRT NUMBER IRF1010 9246 9B 1M DaTE CODE (...
Description HEXFET Power MOSFET HEXFET功率MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220aB package

File Size 138.21K  /  8 Page

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    IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC30aS IRFBC30L IRFBC30aL IRFBC30aSTRL IRFBC30aSTRR
OCR Text ...Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. avalanche Current 6 www.irf.com IRFBC30aS/L Peak Diode Re...a FTER SO LD E R D IP . 2 D IM EN S IO N IN G &amp; TO LE R aN C IN G P ER aN S I Y1 4.5M , 19 82 . 3 C ...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6a)
600V,3.6a,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6a,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6a) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6a

File Size 145.74K  /  10 Page

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