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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
S1T8536X01-T0R0 S1T8536
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| OCR Text |
...6
7
8
9
10
11
12
VREG VCOP VCON VCO
GND PLL
VCC PLL
VREG PLL
CP
LD
CLK DATA
LE
OSCO
2
2.4...17GHz/-15dBm, IF=110.592MHz Data = 1Mbps pseudo random sequence with BTb = 0.5 GFSK modulation. Mod... |
| Description |
2.4GHZ-2.5GHZ SINGLE-CHIP RF TRANSCEIVER Data Sheet
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| File Size |
312.82K /
24 Page |
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it Online |
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UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2266-99F_00 CHA2266
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| OCR Text |
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC Description
VD 1 The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is bo... |
| Description |
12.5-17GHz Low-Noise Driver Amplifier
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| File Size |
123.23K /
7 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
FLL600IQ-2C
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| OCR Text |
...voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 117 and -35.4 mA respectively with gate...17GHz Wide Band Tuned
48 46
Output Power (dBm)
42 40 38 36 34 32 30
Pout
50 40 30 20 10... |
| Description |
L-Band High Power GaAs FET
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| File Size |
116.74K /
4 Page |
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it Online |
Download Datasheet |
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MAXIM[Maxim Integrated Products]
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| Part No. |
MAX2016_06 MAX2016 MAX2016ETI MAX2016ETI_D MAX2016ETI_TD MAX2016ETI-T
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| OCR Text |
...6 7 8 COR 9 VCC 10 SETD 11 OUTD 12 VCC 13 FV2 14 FV1 27 26 25 24 22 21 FB1 20 VCC 19 RFINB+ FB2 18 RFINB17 GND 16 COUTL 15 CSETL FA2
RF/I...17GHz RF Input Power Range 3dB Dynamic Range Range Center Temperature Sensitivity Slope Typical Slop... |
| Description |
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
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| File Size |
931.31K /
20 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0921A
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| OCR Text |
....89 101.36 86.68 70.74 55.29 43.12 (mag) 6.597 4.629 3.312 2.465 1.943 1.638 1.467 1.369 1.306 1.252 1.195 1.130 1.060 0.990 0.927 0.879 0.8...17GHz
Po v.s. Pin
37 35 33 31
freq.=2.17GHz
0.8 0.7
Id(RF) v.s. Pin freq.=2.17GHz
4 3
... |
| Description |
LnS Band GaAs FET
L & S BAND GaAs FET
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| File Size |
427.43K /
24 Page |
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it Online |
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NEC, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
MGFS48B2122
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| OCR Text |
....17 GHz A High power gain GLP = 12 dB (TYP.) @ f=2.17GHz A High power added efficiency
$33/,&$7,21
r
r
r
P.A.E. = 48 % (TYP.) @ f=2.17GHz
r
r ICVG UQWTEG FTCKP
48$/,7<*5$'(
IG
5(&200(1'('%,$6&... |
| Description |
2.11 - 2.17 GHz BAND 60W GaAs FET 21日至二月17号GHz频段60瓦砷化镓场效应管
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| File Size |
223.84K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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