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  11.43-15.24mm Datasheet PDF File

For 11.43-15.24mm Found Datasheets File :: 151    Search Time::4.468ms    
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    Fairchild Semiconductor, Corp.
Part No. FDB3682NL
OCR Text ... fdb3682 / fdp3682 figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14....
Description 100V N-Channel Power Trench MOSFET 32A, 0.036 ohm @ Vgs = 10V, TO-263/D2PAK Package 6 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 308.94K  /  11 Page

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    ETC[ETC]
Part No. SMTDRRI-125-2R1N SMTDRRI-125-1R3N SMTDRRI-125-100M SMTDRRI-125-102M SMTDRRI-125-220M SMTDRRI-125-271M SMTDRRI-125-391M SMTDRRI-125-3R1N SMTDRRI-125-560M SMTDRRI-125-101M SMTDRRI-125-150M SMTDRRI-125-270M SMTDRRI-125-331M SMTDRRI-125-561M SMTDRRI-124-3R9M SMTDRRI-125-120M SMTDRRI-125-121M SMTDRRI-125-151M SMTDRRI-125-180M SMTDRRI-125-181M SMTDRRI-125-221M SMTDRRI-125-330M SMTDRRI-125-390M SMTDRRI-125-470M SMTDRRI-125-471M SMTDRRI-125-4R4N SMTDRRI-125-5R8N SMTDRRI-125-680M SMTDRRI-125-681M SMTDRRI-125-7R5N SMTDRRI-125-821M SMTDRRI-125-820M
OCR Text ...1 1 d.c. resistance () max. 7.0 11.5 13.5 15.8 17.6 20.0 21.6 24.3 27.0 39.2 43.2 45.9 64.8 72.9 100.0 rated d.c. current (A) 9.80 8.00 7.50 6.80 6.60 5.90 5.40 4.90 4.50 3.90 3.60 3.40 3.00 2.75 2.50 (c) 2002 Total Frequency Control Ltd...
Description SMD POWER INDUCTORS -Type SMTDRRI (1.2 ~ 1000)uH-

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    SMTDRRI-125-330M SMTDRRI-124-3R9M SMTDRRI-125-100M SMTDRRI-125-101M SMTDRRI-125-102M SMTDRRI-125-120M SMTDRRI-125-121M S

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. SMTDRRI-125-330M SMTDRRI-124-3R9M SMTDRRI-125-100M SMTDRRI-125-101M SMTDRRI-125-102M SMTDRRI-125-120M SMTDRRI-125-121M SMTDRRI-125-150M SMTDRRI-125-151M SMTDRRI-125-180M SMTDRRI-125-181M SMTDRRI-125-1R3N SMTDRRI-125-220M SMTDRRI-125-221M SMTDRRI-125-270M SMTDRRI-125-271M SMTDRRI-125-2R1N SMTDRRI-125-331M SMTDRRI-125-390M SMTDRRI-125-391M SMTDRRI-125-3R1N SMTDRRI-125-470M SMTDRRI-125-471M SMTDRRI-125-4R4N SMTDRRI-125-560M SMTDRRI-125-561M SMTDRRI-125-5R8N SMTDRRI-125-680M SMTDRRI-125-681M SMTDRRI-125-7R5N SMTDRRI-125-820M SMTDRRI-125-821M
OCR Text ...1 1 d.c. resistance () max. 7.0 11.5 13.5 15.8 17.6 20.0 21.6 24.3 27.0 39.2 43.2 45.9 64.8 72.9 100.0 rated d.c. current (A) 9.80 8.00 7.50 6.80 6.60 5.90 5.40 4.90 4.50 3.90 3.60 3.40 3.00 2.75 2.50 (c) 2002 Total Frequency Control Ltd...
Description SMD POWER INDUCTORS -Type SMTDRRI (1.2 ~ 1000)uH-

File Size 169.22K  /  4 Page

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    FDB8870NL

Fairchild Semiconductor
Part No. FDB8870NL
OCR Text ... fdb8870 rev. a2 fdb8870 figure 11. normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature figure 13. capacitance vs drain to source voltage figure 14....
Description 30V N-Channel PowerTrench MOSFET

File Size 200.52K  /  11 Page

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    Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9N302AS3ST N302AS ISL9N302AS3 ISL9N302AS3S ISL9N302AS3STNL
OCR Text ... Qg, GATE CHARGE (nC) Figure 11. Capacitance vs Drain to Source Voltage 1000 VGS = 4.5V, VDD = 15V, ID = 28A 800 SWITCHING TIME (ns) Figure 12. Gate Charge Waveforms for Constant Gate Currents 1400 VGS = 10V, VDD = 15V, ID = 28A 120...
Description N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Product information
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs

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    FDB367209 FDB3672F085

Fairchild Semiconductor
Part No. FDB367209 FDB3672F085
OCR Text ...gs gate to source gate charge - 11 - nc q gs2 gate charge threshold to plateau - 7.2 - nc q gd gate to drain ? miller ? charge - 4.5 - nc t on turn-on time v dd = 50v, i d = 44a v gs = 10v, r gs = 11.0 - - 104 ns t d(on) turn-on del...
Description N-Channel PowerTrench? MOSFET 100V, 44A, 28mΩ

File Size 446.86K  /  11 Page

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    HCD66731A01BP HCD66731A00BP HCD66730A01 HCD66730A00 HD66730 HD66730A00FS HD66730A01FS HD66731 HD66731A00TA0L HD66731A00T

HITACHI[Hitachi Semiconductor]
Part No. HCD66731A01BP HCD66731A00BP HCD66730A01 HCD66730A00 HD66730 HD66730A00FS HD66730A01FS HD66731 HD66731A00TA0L HD66731A00TB0L HD66731A01TA0L HD66731A01TB0L
OCR Text ...rding to JIS Level-1 Kanji Set (11 x 12 dots): 2,965-character font JIS non-kanji (11 x 12 dots): 524-character font Half-size alphanumeri...43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 SEG7 SEG6 SEG5 SEG4 SEG3 SEG2 S...
Description Dot-Matrix Liquid Crystal Display Controller/Driver Supporting Japanese Kanji, Korean Font Display

File Size 5,302.31K  /  131 Page

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    FDB045AN08A010 FDB045AN08A012 FDB045AN08F085

Fairchild Semiconductor
Part No. FDB045AN08A010 FDB045AN08A012 FDB045AN08F085
OCR Text ... gate charge v gs = 0v to 2v - 11 17 nc q gs gate to source gate charge - 27 - nc q gs2 gate cha rge threshold to plateau - 16 - nc q gd gate to d rain miller charge - 21 - nc swit ching characteristics (v gs = 10v) t on turn-on time ...
Description N-Channel PowerTrench? MOSFET 75V, 80A, 4.5m
N-Channel PowerTrench? MOSFET 75V, 80A, 4.5m

File Size 248.48K  /  11 Page

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    FDB14AN06LF085

Fairchild Semiconductor
Part No. FDB14AN06LF085
OCR Text ...o c v gs = 10v v gs = 3v 9 10 11 12 13 0 20 40 60 80 i d , drain current (a) v gs = 5v v gs = 10v drain to source on resistance(m ) pulse duration = 80 s duty cycle = 0.5% max 0.5 1.0 1.5 2.0 2.5 -80 -40 0 40 80 120 160 200 normalized...
Description N-Channel PowerTrenchMOSFET 60V, 60A, 14.6m
N-Channel PowerTrench? MOSFET 60V, 60A, 14.6mW

File Size 297.86K  /  11 Page

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    FDB045AN08A0 FDB045AN08A006

Fairchild Semiconductor
Part No. FDB045AN08A0 FDB045AN08A006
OCR Text ... gate charge v gs = 0v to 2v - 11 17 nc q gs gate to source gate charge - 27 - nc q gs2 gate charge threshold to plateau - 16 - nc q gd gate to drain ?miller? charge - 21 - nc switching characteristics (v gs = 10v) t on turn-on time v d...
Description N-Channel PowerTrench? MOSFET 75V, 80A, 4.5mΩ

File Size 394.83K  /  11 Page

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