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  0.185a Datasheet PDF File

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    IRLBA1304P IRLBA1304

International Rectifier
Part No. IRLBA1304P IRLBA1304
OCR Text ...ed D VDSS = 40V RDS(on) = 0.004 G ID = 185A S Description The HEXFET(R) is the most popular power MOSFET in the world. This particular HEXFET(R) is in the Super220TM and has the same outline and pinout as the industry stand...
Description HEXFET? Power MOSFET
40V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package
HEXFET Power MOSFET(HEXFET 功率MOS场效应管)

File Size 94.36K  /  8 Page

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    MAX662A MAX662ACPA MAX662ACSA MAX662AEPA MAX662AESA MAX662AMJA MAX662AC_D MAX662AC/D

Maxim Integrated Produc...
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX662A MAX662ACPA MAX662ACSA MAX662AEPA MAX662AESA MAX662AMJA MAX662AC_D MAX662AC/D
OCR Text ... Supply Voltage Range o Fits in 0.1in2 o Guaranteed 30mA Output o No Inductor--Uses Only 4 Capacitors o 185A Quiescent Current o Logic-Controlled 0.5A Shutdown o 8-Pin Narrow SO and DIP Packages _______________General Description The MA...
Description 12V, 30mA Flash Memory Programming Supply
12V 30mA Flash Memory Programming Supply
12V / 30mA Flash Memory Programming Supply
Quadruple 2-Input Exclusive-OR Gates 14-CDIP -55 to 125
Decade Counter 14-CDIP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8
Quadruple 2-Input Exclusive-OR Gates 14-CFP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8

File Size 74.31K  /  6 Page

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    IRFSL11N50A

IRF[International Rectifier]
Part No. IRFSL11N50A
OCR Text ... VDSS = 500V G S RDS(on) = 0.55 ID = 11A Description Third Generation HEXFETs from International Rectifier provide the designer wit...185A/s, VDD V(BR)DSS, TJ 175C 2 www.irf.com IRFSL11N50A 100 VGS 15V 10V 8.0V 7.0V 6.0V...
Description 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET

File Size 106.30K  /  8 Page

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    TC682COA TC682EOA TC682EPA TC682 TC682CPA

TELCOM[TelCom Semiconductor, Inc]
TelCom Semiconductor, Inc.
Part No. TC682COA TC682EOA TC682EPA TC682 TC682CPA
OCR Text ...ous values of C1 and C2 (assume 0.5 ESR). C1 must be rated at 6VDC or greater while C2 and C3 must be rated at 12VDC or greater. Output voltage ripple is affected by C3. Typically the larger the value of C3 the less the ripple for a given l...
Description INVERTING VOLTAGE DOUBLER
SNAP SWITCH 600VAC 15AMP AO OPTIONS

File Size 72.62K  /  6 Page

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    IPB180P04P4-03

Infineon Technologies AG
Part No. IPB180P04P4-03
OCR Text ... 55/175/56 mJ A V W C Rev. 1.0 page 1 2011-04-27 Final Data Sheet IPB180P04P4-03 Parameter Symbol Conditions min. ...185A at 25C. Defined by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm ...
Description OptiMOS-P2 Power-Transistor

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    APT20M10JFLL

Advanced Power Technology Ltd.
Part No. APT20M10JFLL
OCR Text ...istance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain curre...185a 0.010 w g d s caution: these devices are sensitive to electrostatic discharge. proper handling...
Description Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 185A 0.010 Ohm

File Size 63.12K  /  2 Page

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    APT20M10JLL

Advanced Power Technology Ltd.
Part No. APT20M10JLL
OCR Text ...istance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain curre...185a 0.010 w g d s caution: these devices are sensitive to electrostatic discharge. proper handling...
Description Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 185A 0.010 Ohm

File Size 69.46K  /  2 Page

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    IRLBA1304 IRLBA1304P

IRF[International Rectifier]
Part No. IRLBA1304 IRLBA1304P
OCR Text ...n. D VDSS = 40V RDS(on) = 0.004 G ID = 185A S Description The HEXFET(R) is the most popular power MOSFET in the world. This particular HEXFET(R) is in the Super220TM and has the same outline and pinout as the industry stand...
Description HEXFET? Power MOSFET

File Size 103.65K  /  8 Page

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    AMS682CP AMS682ES AMS682 AMS682CS AMS682EP

Advanced Monolithic Sys...
ADMOS[Advanced Monolithic Systems]
Advanced Monolithic Systems, Inc.
Part No. AMS682CP AMS682ES AMS682 AMS682CS AMS682EP
OCR Text ...G TEMPERATURE RANGE -40 to 85 C 0 to 70 C TYPICAL OPERATING CIRCUIT VIN +2.4V < VIN < +5.5V VIN ON/OFF PIN CONFIGURATIONS 8-LEAD DIP/ 8-LEAD SOIC C-2 1 2 8 7 ON/OFF C+1 VIN GND + C1 + C2 - C1 + C1 C2 + C2 - VOUT = -(2 X V...
Description INVERTING VOLTAGE DOUBLER 反向电压倍增

File Size 61.26K  /  7 Page

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    LDV-1851112 LDV-185-350B LDV-185-350A LDV-185-350C LDV-185-700A LDV-185-700C LDV-185-700B

Mean Well Enterprises Co., Ltd.
Mean Well Enterprises C...
Part No. LDV-1851112 LDV-185-350B LDV-185-350A LDV-185-350C LDV-185-700A LDV-185-700C LDV-185-700B
OCR Text 0.5kvac 1minute i/p-o/p:100m ohms / 500vdc / 25 / 70% rh ip67 54~63v 41~50v 47~50v 47 ~ 50v 54 ~ 63v 41 ~ 50v 147w 1. all parameters not sp...185a unit:mm l d v- 1 8 5 s e r i e s 38.8 222.2 198.2 12 9.6 10 10 55 90 4.2 4pl 185w multiple chan...
Description 185W Multiple Channel Output Switching Power Supply

File Size 496.71K  /  3 Page

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