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  wire-bond Datasheet PDF File

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    ICS843031 ICS843031AG ICS843031AGT

PHOENIX CONTACT Deutschland GmbH
ICST[Integrated Circuit Systems]
Part No. ICS843031 ICS843031AG ICS843031AGT
OCR Text ...ure at the junction of the bond wire and bond pad and directly affects the reliability of the device. The maximum recommended junction temperature for HiPerClockSTM devices is 125C. The equation for Tj is as follows: Tj = JA * Pd_total + T...
Description CABLE ASSEMBLY; BANANA PLUG TO BANANA PLUG; 50 OHM, RG316/U COAX; 72" CABLE LENGTH FEMTOCLOCKS⑩晶体至3.3V的LVPECL时钟发生
FEMTOCLOCKS⑩ CRYSTAL-TO-3.3V LVPECL CLOCK GENERATOR
FEMTOCLOCKS CRYSTAL-TO-3.3V LVPECL CLOCK GENERATOR

File Size 200.89K  /  11 Page

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    INA-02100

http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02100
OCR Text ...ball bonding using 0.7 mil gold wire.[1] Chip Outline[1] RF OUT GND 2 Description The INA-02100 is a low-noise silicon bipolar Monol...Bond Pads are 41 m/1.6 mil typical on each side. Note: Ground Bonding is Critical. Refer to Applicat...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

File Size 49.46K  /  3 Page

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    IR2101

IRF[International Rectifier]
Part No. IR2101
OCR Text ...ethod of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Mater...
Description HIGH AND LOW SIDE DRIVER

File Size 357.98K  /  6 Page

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    IR2112

International Rectifier
Part No. IR2112
OCR Text ...ethod of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Mater...
Description HIGH AND LOW SIDE DRIVER

File Size 379.67K  /  14 Page

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    IR2113

IRF[International Rectifier]
Part No. IR2113
OCR Text ...ethod of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Mater...
Description HIGH AND LOW SIDE DRIVER

File Size 388.64K  /  14 Page

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    IR2117

IRF[International Rectifier]
Part No. IR2117
OCR Text ...ethod of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Mater...
Description SINGLE CHANNEL DRIVER

File Size 219.94K  /  7 Page

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    IR2127

International Rectifier
Part No. IR2127
OCR Text ...ethod of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Mater...
Description CURRENT SENSING SINGLE CHANNEL DRIVER

File Size 187.77K  /  6 Page

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    IR2153

International Rectifier
Part No. IR2153
OCR Text ...ethod of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Mater...
Description SELF-OSCILLATING HALF-BRIDGE DRIVER

File Size 209.66K  /  8 Page

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    LMA110B LMA110

FILTRONIC[Filtronic Compound Semiconductors]
Part No. LMA110B LMA110
OCR Text ...ding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic bonding is not recommended. 2.) The recommended die attach is Able...
Description .5-8GHz MESFET Amplifier

File Size 105.87K  /  4 Page

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