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SAMSUNG[Samsung semiconductor]
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| Part No. |
K1B6416B6C
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| OCR Text |
utram
Revision History
Revision No. History
0.0 Initial Draft - Design target Revised - Deleted Deep Power Down Mode support Revised - Changed product code from K1B6416B7C into K1B6416B6C
Draft Date
March 11, 2004
Remark
Advanc... |
| Description |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
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| File Size |
765.70K /
46 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A
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| OCR Text |
utram
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Added Lead Free 48-FBGA-6.00x7.00 Product
Draft Date
October 6, 2003
Remark
Preliminary
November 25, 2003 Preliminary
The attached datasheets are... |
| Description |
1Mx16 bit Uni-Transistor Random Access Memory
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| File Size |
178.10K /
10 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S16161CA-I K1S16161CA DSK1S16161CA
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| OCR Text |
utram
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
Remark
December 12, 2003 Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c... |
| Description |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
184.67K /
10 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K1S2816BCM-I K1S2816BCM
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| OCR Text |
utram
Revision History
Revision No. History
0.0 Initial Draft - Design Target
Draft Date
April 12, 2004
Remark
Preliminary
0.1
Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)" in page 8 ... |
| Description |
8Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
132.33K /
10 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628JTM
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| OCR Text |
...M Bit(8M x16) Synchronous Burst utram
Revision History
Revision No. History
0.0 Initial Draft (256M NOR Flash A-die_rev0.3) (128M utram M-die_rev0.1) Finalize <utram> ....... rev 1.0 - Deleted Synchronous Burst Read and Asynchronous Wr... |
| Description |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst utram
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| File Size |
1,565.84K /
98 Page |
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it Online |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
K5T6432YT K5T6432YTM-T310
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| OCR Text |
utram
MCP MEMORY
Revision History
Revision No. History
1.0 Final Specification
Draft Date
Remark
November 27, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve ... |
| Description |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) utram, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 utram
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| File Size |
602.15K /
40 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KBE00F005A-D411 KBE00F005A
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| OCR Text |
...on F = 512M+512M, 2.7V/2.7V, x8 utram Density, Voltage, Organization 0 = None SRAM Density, Voltage, Organization 0 = None
Version A = 2nd Generation SDRAM Interface, Density, Voltage, Organization, Option 5 = M-SDR, 256M+256M, 1.8V/1.8V... |
| Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,346.36K /
87 Page |
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it Online |
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SAMSUNG[Samsung semiconductor]
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| Part No. |
KBE00G003M-D411 KBE00G003M
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| OCR Text |
...on F = 512M+512M, 1.8V/1.8V, x8 utram Density, Voltage, Organization 0 = None SRAM Density, Voltage, Organization 0 = None Version M = 1st Generation SDRAM Interface, Density, Voltage, Organization, Option 3 = M-SDR, 256M+256M, 1.8V/1.8V, x... |
| Description |
NAND 512Mb*2 Mobile SDRAM 256Mb*2
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| File Size |
1,236.80K /
89 Page |
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it Online |
Download Datasheet |
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