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| Part No. |
BGY282_N_5
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| OCR Text |
uhf amplifier module for GSM900 and GSM1800
Preliminary specification 2002 Apr 9
Philips Semiconductors
Preliminary specification
Dual band uhf amplifier module for GSM900 and GSM1800
FEATURES * Dual band GSM amplifier * 3.5 V no... |
| Description |
From old datasheet system
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| File Size |
405.15K /
12 Page |
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it Online |
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| Part No. |
BGY916_4
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| OCR Text |
uhf amplifier module
Product specification Supersedes data of 1997 Jul 11 1998 May 27
Philips Semiconductors
Product specification
uhf amplifier module
BGY916
FEATURES * 26 V nominal supply voltage * 16 W output power into a... |
| Description |
From old datasheet system
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| File Size |
68.36K /
12 Page |
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it Online |
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Philips
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| Part No. |
BGY925_5_3 BGY925/5
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| OCR Text |
uhf amplifier module
Product specification Supersedes data of 2000 Jan 10 2000 Jan 17
Philips Semiconductors
Product specification
uhf amplifier module
FEATURES * 26 V nominal supply voltage * 23 W output power into a load of 50 ... |
| Description |
uhf amplifier module
From old datasheet system
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| File Size |
90.62K /
12 Page |
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it Online |
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| Part No. |
BLF2043_6
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| OCR Text |
uhf power LDMOS transistor
Product specification Supersedes data of 2002 Sep 10 2003 Feb 10
Philips Semiconductors
Product specification
uhf power LDMOS transistor
FEATURES * Typical 2-tone performance at a supply voltage of 26 V... |
| Description |
From old datasheet system
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| File Size |
93.85K /
12 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLF4G20-110B BLF4G20S-110B BLF4G20S-110B112
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| OCR Text |
uhf power LDMOS transistor
Rev. 01 -- 23 January 2006 Product data sheet
1. Product profile
1.1 General description
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical... |
| Description |
uhf power LDMOS transistor
From old datasheet system
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| File Size |
108.78K /
14 Page |
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it Online |
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| Part No. |
BLF521_CNV_4
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| OCR Text |
uhf power MOS transistor
Product specification November 1992
Philips Semiconductors
Product specification
uhf power MOS transistor
FEATURES * High power gain * Easy power control * Gold metallization * Good thermal stability * Wi... |
| Description |
From old datasheet system
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| File Size |
66.69K /
14 Page |
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it Online |
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Toshiba
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| Part No. |
TMPA8895CSNG7E35
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| OCR Text |
... ? 14 bits pwm ?? v - l v - h uhf ? ???????? (38m 38.9m 45.75m ? ) ? 0~248 0~255 ?? 2. ?? e 2 prom ?? , 3? e2prom 3. ? pal ntsc ??????? pal -n pal -m nts c ???? 4. ???? 4.5m 5.5m 6.0m 6.5m 5. ???? att ? ??????? ta1343 ta1304... |
| Description |
TMPA8895CSNG7E35
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| File Size |
547.23K /
34 Page |
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it Online |
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Price and Availability
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