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section 4 architecture Datasheet PDF File

For section 4 architecture Found Datasheets File :: 150+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Analog Devices, Inc.
Part No.	CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J-TE13 CAT64LC40S-TE13 CAT64LC40S-TE7 CAT64LC40SI-TE13 CAT64LC40SI-TE7 CAT64LC40ZS-TE13 CAT64LC40ZSI-TE13
Description	72-Mbit QDR™-II SRAM 2-Word Burst architecture 72-Mbit QDR™-II SRAM 4-Word Burst architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ architecture SPI Serial EEPROM SPI串行EEPROM 72-Mbit QDR-II SRAM 2-Word Burst architecture SPI串行EEPROM 72-Mbit QDR-II SRAM 2-Word Burst architecture
File Size	486.65K / 9 Page	View it Online	Download Datasheet

				Cypress Semiconductor
Part No.	CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV25-167BZC CY7C1306AV25-167BZC CY7C1303AV25-133BZC CY7C1306AV25-133BZC
Description	Memory : Sync SRAMs 18-Mb Burst of 2 Pipelined SRAM with QDR(TM) architecture 18-Mb Burst of 2 Pipelined SRAM with QDR⑩ architecture 18-Mb Burst of 2 Pipelined SRAM with QDR architecture 18-Mb Burst of 2 Pipelined SRAM with QDR?/a> architecture
File Size	325.22K / 19 Page	View it Online	Download Datasheet

				Altera Corporation
Part No.	EP2SGX60C EP2SGX30CF780C5N EP2SGX30D EP2SGX60CF780C4N EP2SGX130G
Description	section I. Stratix II GX Device Data Sheet Support for numerous single-ended and differential I/O standards section I. Stratix II GX Device Data Sheet
File Size	1,800.82K / 316 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp.
Part No.	CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400BZI CY7C1561KV18-400BZXC CY7C1561KV18-400BZXI CY7C1561KV18-450BZC CY7C1561KV18-450BZI CY7C1561KV18-450BZXC CY7C1561KV18-450BZXI CY7C1561KV18-500BZC CY7C1561KV18-500BZI CY7C1561KV18-500BZXC CY7C1561KV18-500BZXI CY7C1561KV18-550BZC CY7C1561KV18-550BZI CY7C1561KV18-550BZXC CY7C1561KV18-550BZXI CY7C1563KV18 CY7C1563KV18-400BZC CY7C1563KV18-400BZI CY7C1563KV18-400BZXC CY7C1563KV18-400BZXI CY7C1563KV18-450BZC CY7C1563KV18-450BZI CY7C1563KV18-450BZXC CY7C1563KV18-450BZXI CY7C1563KV18-500BZC CY7C1576KV18-500BZXC CY7C1576KV18-500BZXI CY7C1576KV18-400BZC CY7C1576KV18-400BZI CY7C1576KV18-400BZXC CY7C1576KV18-400BZXI CY7C1563KV18-500BZI CY7C1563KV18-500BZXC CY7C1563KV18-500BZXI CY7C1565KV18-550BZC CY7C1565KV18-550BZI CY7C1565KV18-550BZXC CY7C1565KV18-550BZXI CY7C1565KV18-400BZC CY7C1565KV18-400BZI CY7C1565KV18-400BZXC CY7C1565KV18-400BZXI CY7C1563KV18-550BZXC CY7C1563KV18-550BZXI CY7C1576KV18-500BZC CY7C1565KV18-500BZC CY7C1576KV18-500BZI CY7C1565KV18-500BZI CY7C1565KV18 CY7C1576KV18-550BZC CY7C1563KV18-550BZC CY7C1576KV18-550BZI CY7C1563KV18-550BZI
Description	72-Mbit QDR(TM)-II SRAM 4-Word Burst architecture (2.5 Cycle Read Latency); architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165 72-Mbit QDR-II SRAM 4-Word Burst architecture
File Size	563.12K / 28 Page	View it Online	Download Datasheet

				M.S. Kennedy Corp. M.S. Kennedy Corporation
Part No.	BBF2805SE BBF2815S BBF2812S BBF2805SK BBF2803SH BBF2812SE BBF2803SE BBF2815SE BBF2800S BBF2812SH BBF2815SK BBF2803S BBF2805S
Description	3.3V, 20W DC-DC converter 15V, 20W DC-DC converter 12V, 20W DC-DC converter Analog IC 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL™ architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ architecture 18-Mbit QDR™-II SRAM 2-Word Burst architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ architecture 20W DC-DC Converter(输出功率20WDC-DC转换
File Size	162.89K / 7 Page	View it Online	Download Datasheet

				Analog Devices, Inc.
Part No.	CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J-TE13 CAT64LC10ZS-TE13 CAT64LC10ZSI-TE13
Description	18-Mbit QDR™-II SRAM 4-Word Burst architecture 18-Mbit DDR-II SRAM 2-Word Burst architecture 36-Mbit DDR-II SRAM 2-Word Burst architecture (2.5 Cycle Read Latency) 4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM SPI Serial EEPROM SPI串行EEPROM
File Size	494.12K / 9 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
Part No.	CY7C1415BV18-250BZI CY7C1415BV18-167BZI
Description	36-Mbit QDR(TM)-II SRAM 4-Word Burst architecture; architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR-II SRAM 4-Word Burst architecture
File Size	956.33K / 30 Page	View it Online	Download Datasheet

				CYPRESS SEMICONDUCTOR CORP
Part No.	CY7C1418AV18-267BZC
Description	36-Mbit DDR-II SRAM 2-Word Burst architecture; architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
File Size	917.70K / 27 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
Part No.	MAX8890 MAX8890ETCGGG MAX8890ETCMMM MAX8890ETCDDD
Description	2.9 V, integrated cellular RF-section power-management IC 2.8 V, integrated cellular RF-section power-management IC Integrated Cellular RF-section Power-Management IC 集成的蜂窝电RF部分电源管理IC 1.8 V, integrated cellular RF-section power-management IC
File Size	232.00K / 12 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation. Renesas Electronics, Corp.
Part No.	M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M38232G4-XXXFP M38232G4-XXXHP M38233G4-XXXFP M38233G4-XXXHP M38234G4-XXXFP M38234G4-XXXHP M38235G4-XXXFP M38230G6-XXXFP M38230G6-XXXHP M38231G6-XXXFP M38231G6-XXXHP M38232G6-XXXFP M38232G6-XXXHP M38233G6-XXXFP M38233G6-XXXHP M38234G6-XXXFP M38234G6-XXXHP M38235G6-XXXFP M38235G6-XXXHP M38236G6-XXXHP M38237G6-XXXFP M38237G6-XXXHP M38238G6-XXXFP M38230G7-XXXFP M38230G7-XXXHP M38231G7-XXXFP M38231G7-XXXHP M38232G7-XXXFP M38232G7-XXXHP M38233G7-XXXFP M38233G7-XXXHP M38234G7-XXXFP M38234G7-XXXHP M38235G7-XXXFP M38235G7-XXXHP M38236G7-XXXFP M38236G7-XXXHP M38237G7-XXXFP M38237G7-XXXHP M38238G7-XXXFP M38238G7-XXXHP M38239G7-XXXFP M38239G7-XXXHP M38230G8-XXXFP M38230G8-XXXHP M38231G8-XXXFP M38231G8-XXXHP M38232G8-XXXFP M38232G8-XXXHP M38233G8-XXXFP M38233G8-XXXHP M38234G8-XXXFP M38234G8-XXXHP M38235G8-XXXFP M38235G8-XXXHP M38236G8-XXXFP M38236G8-XXXHP M38237G8-XXXFP M38237G8-XXXHP M38238G8-XXXFP M38238G8-XXXHP M38230GA-XXXFP M38230GA-XXXHP M38231GA-XXXFP M38231GA-XXXHP M38232GA-XXXFP M38232GA-XXXHP M38233GA-XXXFP M38233GA-XXXHP M38234GA-XXXFP M38234GA-XXXHP M38235GA-XXXFP M38235GA-XXXHP M38236GA-XXXFP M38236GA-XXXHP M38237GA-XXXFP M38237GA-XXXHP
Description	18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 4-Word Burst architecture; architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst architecture; architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM; architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst architecture; architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst architecture; architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) architecture; architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst architecture; architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II SRAM 2-Word Burst architecture; architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync SRAM; architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst architecture; architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst architecture; architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst architecture (2.5 Cycle Read Latency); architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II SRAM 2-Word Burst architecture (2.0 Cycle Read Latency); architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst architecture; architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) architecture; architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 4-Word Burst architecture; architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 2-Word Burst architecture; architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II SRAM 4-Word Burst architecture; architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync SRAM; architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II SRAM 2-Word Burst architecture; architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst architecture; architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst architecture; architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
File Size	901.80K / 76 Page	View it Online	Download Datasheet

For section 4 architecture Found Datasheets File :: 150+ Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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