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rg-59 u Datasheet PDF File

For rg-59 u Found Datasheets File :: 1864 Search Time::1.406ms
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				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text	...VDD = 15V --- ID = 24.8A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz Avalanche Characteristics Symbol E...59 74 63 93 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integra...
Description	30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- RD = 1.7, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr t...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...VDD = -30V --- ID = -18A ns --- RG = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	... Tc = 25C 3. Value at Ta = 25C, Rg 50 , L=100H 2 2SJ505(L), 2SJ505(S) Electrical Characteristics (Ta = 25C) Item Drain to source br...59 0.2 0.1 +0.2 -0.1 2.59 0.2 0.4 0.1 0.4 0.1 2.54 0.5 2.54 0.5 2.54 0.5 1.2 0.2 ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	2SJ549 2SJ549L 2SJ549S
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 5 -- -- -- -- -- -...59 0.2 1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5 3.0 +0.3 -0.5 0.1 +0...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
File Size	54.89K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SJ550 2SJ550L 2SJ550S
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 6.5 -- -- -- -- --...59 0.2 1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5 3.0 +0.3 -0.5 0.1 +0...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ551 2SJ551L 2SJ551S
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 10 -- -- -- -- -- ...59 0.2 1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5 3.0 +0.3 -0.5 0.1 +0...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	54.47K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 10 -- -- -- -- -- ...59 0.2 1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5 3.0 +0.3 -0.5 0.1 +0...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
File Size	55.15K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ553 2SJ553L 2SJ553S
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 15 -- -- -- -- -- ...59 0.2 1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5 3.0 +0.3 -0.5 0.1 +0...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.75K / 9 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT12045L2VR
OCR Text	... DV NF A I 280 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX uNIT Amps Volts ns C ...59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.91K / 2 Page	View it Online	Download Datasheet

For rg-59 u Found Datasheets File :: 1864 Search Time::1.406ms
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