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Philips
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Part No. |
BLL1214-250 BLL1214-250_2
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OCR Text |
...utline.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 1 ms; ...transistor
THERMAL CHARACTERISTICS SYMBOL Zth j-h Zth j-h Notes 1. Thermal resistance is determined... |
Description |
L-band radar LDMOS transistor From old datasheet system
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File Size |
76.35K /
12 Page |
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Wolfspeed
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Part No. |
CGHV1F006S
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OCR Text |
...ge without notice. www.cree.com/rf
2 cghv1f006s rev 5.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.31...transistor cghv1f006s 1 55 60 65 70 75 38.0 38.5 39.0 39.5 40.0 drain efficiency (%) utput power (db... |
Description |
6W, DC - 18 GHz, 40V, GaN HEMT
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File Size |
2,450.04K /
22 Page |
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NXP Semiconductors N.V.
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Part No. |
BFU630F
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OCR Text |
...th bfu630f npn wideband silicon rf transistor rev. 1 ? 15 december 2010 product data sheet caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautio... |
Description |
Product descriptionNPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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File Size |
98.14K /
12 Page |
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it Online |
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