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For precharge Found Datasheets File :: 8521    Search Time::1.282ms    
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    Micross Components
Part No. AS4SD8M16DG-75/IT
OCR Text ...nal banks for hiding row access/precharge ? programmable burst lengths: 1, 2, 4, 8 or full page ? auto precharge, includes concurrent auto precharge and auto refresh modes ? self refresh mode (it & et) ? 64ms, 4,096-cycle refresh (it...
Description Self Refresh Mode

File Size 6,667.99K  /  52 Page

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    MAXIM - Dallas Semiconductor
Part No. MAX8895EVKIT
OCR Text ... up in fast-charge mode. if in precharge mode, verify that the ammeter reads 80ma. if in fast-charge mode, verify that the ammeter reads 500ma due to the usb current limit. 15) verify that the voltage read by dmm2 is approxi - mately 3.3...
Description Evaluation Kit for the MAX8895W, MAX8895X, and MAX8895Y

File Size 307.38K  /  14 Page

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    Integrated Silicon Solu...
Part No. IS45VM32160E-6BLA1 IS45VM32160E-6BLA2
OCR Text ...wer down mode ? automatic precharge , includes concurrent auto precharge mode and controlled precharge features copyright ? 2016 integrated silicon solution, inc. all rights reserved. issi reserves the right to make...
Description 4M x 32Bits x 4Banks Mobile Synchronous DRAM

File Size 585.18K  /  33 Page

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    Integrated Silicon Solu...
Part No. IS42VM32160E IS45SMVM32160E IS42RMVM32160E
OCR Text ...wer down mode ? automatic precharge , includes concurrent auto precharge mode and controlled precharge features copyright ? 2014 integrated silicon solution, inc. all rights reserved. issi reserves the right to mak...
Description Auto refresh and self refresh

File Size 581.54K  /  33 Page

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    Integrated Silicon Solu...
Part No. IS42VM32160C IS42VM32160C-10BI IS42VM32160C-10BL IS42VM32160C-10BLI
OCR Text ...ess a0-a8 with a10 defning auto precharge) to select one location in the respective bank. during a precharge command,a10 is sampled to determine if all banks are to be precharged (a10 =high). the address inputs also provide the op-code du...
Description 512Mb Mobile Synchronous DRAM

File Size 297.82K  /  17 Page

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    UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128

NEC[NEC]
Part No. UPD45128163 UPD45128163G5-A10 UPD45128163G5-A10-9JF UPD45128163G5-A10B UPD45128163G5-A10B-9JF UPD45128163G5-A75 UPD45128163G5-A75-9JF UPD45128163G5-A80 UPD45128163G5-A80-9JF UPD45128441 UPD45128441G5-A10 UPD45128441G5-A10-9JF UPD45128441G5-A10B UPD45128441G5-A10B-9JF UPD45128441G5-A75 UPD45128441G5-A75-9JF UPD45128441G5-A80 UPD45128441G5-A80-9JF UPD45128841 UPD45128841G5-A10 UPD45128841G5-A10-9JF UPD45128841G5-A10B UPD45128841G5-A10B-9JF UPD45128841G5-A75 UPD45128841G5-A75-9JF UPD45128841G5-A80 UPD45128841G5-A80-9JF
OCR Text ...S latency (2 and 3) * Automatic precharge and controlled precharge * CBR (Auto) refresh and self refresh * x4, x8, x16 organization * Single 3.3 V 0.3 V power supply * LVTTL compatible inputs and outputs * 4,096 refresh cycles / 64 ms * Bu...
Description 128M-bit Synchronous DRAM 4-bank, LVTTL

File Size 1,081.23K  /  92 Page

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    White Electronic Designs
Part No. EDI9LC644V1312BC EDI9LC644V1310BC EDI9LC644V1512BC EDI9LC644V2010BC EDI9LC644V1612BC EDI9LC644V1510BC EDI9LC644V1610BC EDI9LC644V2012BC
OCR Text ... sda 10 sdram address 10/auto precharge bwe 0-3 ssram byte write enables sdram sdqm 0 - 3 ssce chip enable ssram device sdce chip enable sdram device v cc power supply pins, 3.3v v ccq data bus power supply pins, 3.3v (2.5v future) v ss g...
Description SSRAM access:133MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:133MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:150MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:166MHz; SDRAM access:100MHz; 128K x 32 SSRAM/1M x 32 SDRAM
SSRAM access:200MHz; SDRAM access:125MHz; 128K x 32 SSRAM/1M x 32 SDRAM

File Size 1,544.49K  /  25 Page

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    Samsung Electronic
Part No. K4S560832D-NCL7C
OCR Text ... ras low. enables row access & precharge. cas column address strobe latches column addresses on the positive going edge of the clk with cas low. enables column access. we write enable enables write operation and row precharge. latches da...
Description 8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz

File Size 78.93K  /  9 Page

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