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goldmos Datasheet PDF File

For goldmos Found Datasheets File :: 158 Search Time::1.359ms
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				Ericsson Microelectronics
Part No.	PTF10107
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10107 is a 5-watt goldmos FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold met...
Description	5 Watts/ 2.0 GHz goldmos Field Effect Transistor 5 Watts, 2.0 GHz goldmos Field Effect Transistor
File Size	82.10K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10153
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10153 is an internally matched 60-watt goldmos FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride surf...
Description	60 Watts/ 1.8-2.0 GHz goldmos Field Effect Transistor 60 Watts, 1.8-2.0 GHz goldmos Field Effect Transistor 60 Watts, 1.8.0 GHz goldmos Field Effect Transistor
File Size	103.34K / 5 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10134
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10134 is an internally matched goldmos FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride su...
Description	100 Watts, 2.1.2 GHz goldmos Field Effect Transistor 100 Watts, 2.1-2.2 GHz goldmos Field Effect Transistor
File Size	317.17K / 7 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10138
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10138 is a 60-watt goldmos FET intended for amplifier applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB gain. Nitride surface passivation and full gold metalliz...
Description	60 Watts, 860-960 MHz goldmos Field Effect Transistor
File Size	105.39K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10048
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10048 is an internally matched 30-watt goldmos FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passi...
Description	30 Watts, 2.1.2 GHz, W-CDMA goldmos Field Effect Transistor 30 Watts/ 2.1-2.2 GHz/ W-CDMA goldmos Field Effect Transistor 30 Watts, 2.1-2.2 GHz, W-CDMA goldmos Field Effect Transistor
File Size	232.19K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF102027
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 102027 is a 40-watt goldmos FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures...
Description	40 Watts, 92560 MHz goldmos Field Effect Transistor 40 WATTS, 925-960 MHZ goldmos FIELD EFFECT TRANSISTOR
File Size	205.81K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF102028
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 102028 is an 18-watt goldmos FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full...
Description	18 Watts, 86060 MHz goldmos Field Effect Transistor 18 Watts 860-960 MHz goldmos Field Effect Transistor 18 Watts, 860-960 MHz goldmos Field Effect Transistor
File Size	218.04K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF080101S PTF080101
OCR Text	...1 is a 10 W, internally matched goldmos FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features * * Broadband internal matching Typical EDGE perf...
Description	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
File Size	60.76K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTF10154
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10154 is an internally matched 85-watt goldmos FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This device operates at 43% efficiency with 11 dB gain. Nitride surf...
Description	85 Watts/ 1.93-1.99 GHz goldmos Field Effect Transistor 85 Watts, 1.93-1.99 GHz goldmos Field Effect Transistor 85瓦，1.93-1.99 GHz的goldmos场效应晶体管 85 Watts 1.93-1.99 GHz goldmos Field Effect Transistor
File Size	255.49K / 5 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10007
OCR Text	goldmos (R) Field Effect Transistor Description The PTF 10007 is a 35 Watt goldmos FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold me...
Description	35 Watts, 1.0 GHz goldmos Field Effect Transistor 35瓦，1.0 GHz的goldmos场效应晶体管 35 Watts/ 1.0 GHz goldmos Field Effect Transistor 35 Watts 1.0 GHz goldmos Field Effect Transistor
File Size	234.16K / 6 Page	View it Online	Download Datasheet

For goldmos Found Datasheets File :: 158 Search Time::1.359ms
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