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  gate bipolar transistor silico Datasheet PDF File

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    IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15

International Rectifier
Part No. IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15
Description 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED gate bipolar transistor
   INSULATED gate bipolar transistor

File Size 367.67K  /  10 Page

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    IRG4PH40KDPBF IRG4PH40KDPBF-15

International Rectifier
Part No. IRG4PH40KDPBF IRG4PH40KDPBF-15
Description INSULATED gate bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSUALATED gate bipolar transistor WITH YLTRAFAST SOFT RECOVERY DIODE

File Size 746.83K  /  11 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED gate bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED gate bipolar transistor(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

File Size 164.74K  /  8 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED gate bipolar transistor WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED gate bipolar transistor(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATED gate bipolar transistor(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT15M321
Description INSULATED gate bipolar transistor silicoN N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED gate bipolar transistor silicoN N CHANNEL IGBT

File Size 257.03K  /  6 Page

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    MGP7N60E-D

ON Semiconductor
Part No. MGP7N60E-D
Description Insulated gate bipolar transistor N-Channel Enhancement-Mode silicon gate

File Size 106.31K  /  6 Page

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    MGW12N120-D

ON Semiconductor
Part No. MGW12N120-D
Description Insulated gate bipolar transistor N-Channel Enhancement-Mode silicon gate

File Size 123.24K  /  6 Page

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    MGP21N60E-D

ON Semiconductor
Part No. MGP21N60E-D
Description Insulated gate bipolar transistor N-Channel Enhancement-Mode silicon gate

File Size 109.57K  /  6 Page

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    MGP4N60E-D

ON Semiconductor
Part No. MGP4N60E-D
Description Insulated gate bipolar transistor N-Channel Enhancement-Mode silicon gate

File Size 108.35K  /  6 Page

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    MGW14N60ED-D

ON Semiconductor
Part No. MGW14N60ED-D
Description Insulated gate bipolar transistor N-Channel Enhancement-Mode silicon gate

File Size 124.38K  /  6 Page

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