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  gan-hemt Datasheet PDF File

For gan-hemt Found Datasheets File :: 588    Search Time::1.343ms    
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    MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-SB3PPR

M/A-COM Technology Solutions, Inc.
Part No. MAGX-001214-500L00 MAGX-001214-500L0S MAGX-001214-SB3PPR
OCR Text gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty magx-001214-500l00 magx-001214-500l0s 1 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s)...
Description GaN on SiC Depletion-Mode Transistor Technology Internally Matched

File Size 211.23K  /  8 Page

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    MAGX-001090-600L00 MAGX-001090-SB0PPR

M/A-COM Technology Solutions, Inc.
Part No. MAGX-001090-600L00 MAGX-001090-SB0PPR
OCR Text gan on sic hemt pulsed power transistor 600 w peak, 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make chang...
Description GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration

File Size 938.29K  /  7 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN030MK
OCR Text gan-hemt 30W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 46.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 12dB(typ.) @ f=2700MHz Broad Frequency Range : 800 to 2800MHz Proven Reliability EGN...
Description High Voltage - High Power gan-hemt

File Size 188.40K  /  3 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN045MK
OCR Text gan-hemt 45W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 47.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 12dB(typ.) @ f=2200MHz Broad Frequency Range : 800 to 2200MHz Proven Reliability EGN...
Description High Voltage - High Power gan-hemt

File Size 205.87K  /  3 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN21A045I EGN21A045IV
OCR Text gan-hemt 45W Preliminary FEATURES High Voltage Operation : VDS=50V High Gain: 16dB(typ.) at Pout=39dBm(Avg.) High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability EGN21A045IV High...
Description High Voltage - High Power gan-hemt

File Size 226.74K  /  4 Page

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    MAGX-000912-500L00 MAGX-000912-SB3PPR

M/A-COM Technology Solutions, Inc.
Part No. MAGX-000912-500L00 MAGX-000912-SB3PPR
OCR Text gan on sic hemt pulsed power transistor 500 w peak, 960 to 1215 mhz, 128 s pulse, 10% duty rev. v1 magx - 000912 - 500l00 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make chan...
Description GaN on SiC Depletion-Mode Transistor Technology

File Size 829.17K  /  6 Page

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    MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR MAGX-000035-01000X MAGX-000035-01000X-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
Part No. MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR MAGX-000035-01000X MAGX-000035-01000X-15
OCR Text gan on sic hemt power transistor 10w cw, 30 mhz - 3.5 ghz rev. v3 magx-000035-010000 magx-000035-01000s 1 1 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information...
Description GaN on SiC HEMT Power Transistor Common-Source configuration

File Size 586.43K  /  8 Page

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    MGF0846G

Mitsubishi Electric Semiconductor
Part No. MGF0846G
OCR Text gan hemt (small signal gain stage) > mgf0846g l to c band / 40w non - matched description the mgf0846g, gan hemt with an n-channel schottky gate, is designed for mmds/umts/wimax applications. features ? high voltage operati...
Description High-power GaN HEMT (small signal gain stage)

File Size 114.58K  /  4 Page

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    MGF0843G

Mitsubishi Electric Semiconductor
Part No. MGF0843G
OCR Text gan hemt (small signal gain stage) > mgf0843g l to c band / 20w non - matched description the mgf0843g, gan hemt with an n-channel schottky gate, is designed for mmds/umts/wimax applications. features ? high voltage operati...
Description High-power GaN HEMT (small signal gain stage)

File Size 113.80K  /  4 Page

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    EUDYNA[Eudyna Devices Inc]
Part No. EMC21L1004 EMC21L1004GN
OCR Text gan-hemt 10W Preliminary FEATURES High Voltage Operation : VDS=50V High Gain: 28.5dB(typ.) at Pout=22dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz Proven Reliability Small and Low Cost Metal Base Package EMC21L1004GN High Volta...
Description High Voltage - High Power gan-hemt Power Amplifier Module

File Size 188.71K  /  4 Page

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For gan-hemt Found Datasheets File :: 588    Search Time::1.343ms    
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