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  ga-a Datasheet PDF File

For ga-a Found Datasheets File :: 4980    Search Time::2.61ms    
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    List of Unclassifed Man...
Part No. MGA-100-A-9V
OCR Text ...el mg a-9v ) digital pressure ga ge product overview product description the mediagauge ? model mg a - 9v is a nema 4x rated stand alone 9v battery ...
Description Application Note PS-AN5 MediaGauge?(Model MGA-9V) Digital Pressure Gage

File Size 179.37K  /  6 Page

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    NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG2101M161 NESG2101M16 NESG2101M16-A-YFB

NEC
Part No. NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG2101M161 NESG2101M16 NESG2101M16-A-YFB
OCR Text ...F), f = 2 GHz NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz * Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = ...A Package 6-pin lead-less minimold (M16, 1208 PKG) NESG2101M16-T3 NESG2101M16-T3-A (Pb-Free) Quantit...
Description L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

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    NE5550279A-T1A-A NE5550279A-A NE5550279A-T1-A

California Eastern Labs
Part No. NE5550279A-T1A-A NE5550279A-A NE5550279A-T1-A
OCR Text ... i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the ta p e ne55 502 79a- t 1 ne55 502 79a- t 1-a ? 12 mm w i de e mbosse d tapin g ? ga te pin faces the perforati on side o f the t...
Description Silicon Power LDMOS FET

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    NE3521M04-T2B-A

California Eastern Labs
Part No. NE3521M04-T2B-A
OCR Text ... nf = 0.85 db typ ., ga = 11 db t y p. @ v ds = 2 v, i d = 10 m a , f = 20 ghz nf = 0.9 db t y p. , ga = 10. 5 db t y p . @v ds = 2 v, i d = 6 m a , f = 2 0 g h z ...
Description N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

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    Duracell
CEL[California Eastern Labs]
California Eastern Laboratories, Inc.
Part No. NE661M04-T2-A NE661M04
OCR Text ... = 25C) FREQ. (GHz) NFOPT (dB) GA (dB) OPT MAG ANG Rn/50 Note: 1. Operation in excess of any one of these parameters may result in perma...a VALUE 240 650 UNIT C/W C/W 21.70 19.50 19.10 16.50 14.70 13.90 13.30 0.69 0.66 0.65 0.64 0.6...
Description NPN SILICON HIGH FREQUENCY TRANSISTOR NPN硅高频晶体管

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    CEL[California Eastern Labs]
Part No. NE662M04-T2-A NE662M04 NE662M04-T2
OCR Text ...AMETERS FREQ. (GHz) NFMIN (dB) GA (dB) OPT MAG (TA = 25C) ANG Rn/50 VC = 2 V, IC = 3 mA 0.8 0.9 1.0 1.5 1.8 1.9 2.0 2.5 0.78 0.80 0.8...a VALUE 150 650 UNIT C/W C/W Junction to Case Resistance Junction to Ambient Resistance ...
Description NPN SILICON HIGH FREQUENCY TRANSISTOR

File Size 310.57K  /  11 Page

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    CEL[California Eastern Labs]
Part No. NE662M16-T3-A NE662M16
OCR Text ...URRENT 6 5 VCE = 1 V f = 1 GHz Ga 30 25 6 5 VCE = 2 V f = 1 GHz Ga NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 30 25 20 15 10 ...a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to design...
Description NPN SILICON HIGH FREQUENCY TRANSISTOR

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    CEL[California Eastern Labs]
Part No. NESG2030M04-T2-A NESG2030M04 NESG2030M04-A NESG2030M04-T2
OCR Text ...22 1.1 DC IEBO hFE Cre NF Ga MSG RF |S21E|2 P1dB OIP3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measure...A NESG2030M04-T2-A QUANTITY 50 pcs(non reel) 3 kpcs/reel TYPICAL PERFORMANCE CURVES (TA = 25C)...
Description NPN SiGe HIGH FREQUENCY TRANSISTOR

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    CEL[California Eastern Labs]
Part No. NE685M13-T3-A NE685M13
OCR Text ...(mA) 100 Associated Gain, Ga (dB) 3 12 3 12 2 NF 8 2 NF 1 0 1 8 1 0 1 4 0 100 4 0 100 10 Collector Current, IC (mA) 10 Collector Current, IC (mA) 3-158 Associated Gain, Ga (dB) Noise...
Description NPN SILICON TRANSISTOR

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    CEL[California Eastern Labs]
Part No. NE687M13-T3-A NE687M13 NE687M13-A
OCR Text ... CURRENT 5 VCE = 2 V f = 1 GHz Ga 16 20 Associated Gain, Ga (dB) Ga 16 4 3 12 3 12 2 NF 1 8 2 NF 1 8 ...a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to design...
Description NECs NPN SILICON TRANSISTOR

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