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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
SSM3J14T
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OCR Text |
...
2-3S1A
Note 1: Mounted on fr4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by maximum channel temperature.
Weight: 10 mg (typ.)
Marking
3
Equivalent Circuit
3
KDL
1
2
1
2... |
Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
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File Size |
174.66K /
6 Page |
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
SSM5G01TU
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OCR Text |
... Unit C C
Note 1: Mounted on fr4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu pad: 645 mm ) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature... |
Description |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
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File Size |
196.88K /
9 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
SSM6J07FU
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OCR Text |
...
2-2J1D
Note 1: Mounted on fr4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm 6)
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit
Figure 1: (top view)
25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm2 6
0.4 mm
6
5
4... |
Description |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Transistor Silicon P Channel MOS Type
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File Size |
134.48K /
5 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
SSM6J08FU
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OCR Text |
...
Note1: Note2:
Mounted on fr4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm 6) Fig: 1. The pulse width limited by max channel temperature.
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit
Fig 1: 25.4 mm 25.4 mm 1.6 ... |
Description |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
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File Size |
150.82K /
6 Page |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
SSM6K08FU
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OCR Text |
...
2-2J1D
Note1: Mounted on fr4 board. 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm 6)
Figure 1.
Weight: 6.8 mg (typ.)
Marking Circuit (top view)
6 5 4
Equivalent
6 5 4
KDC
1
2
3
1
2
3
Handling Prec... |
Description |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category High Speed Switching Applications CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
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File Size |
148.36K /
6 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STTH112_07 STTH112 STTH112A STTH112RL STTH112U STTH112-07
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OCR Text |
...nt versus pulse duration (epoxy fr4, Lleads = 10mm) (DO-41).
1.0 0.9 0.8 0.7
Relative variation of thermal impedance junction ambient versus pulse duration (epoxy fr4) (SMA).
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1... |
Description |
High voltage ultrafast rectifier
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File Size |
69.88K /
7 Page |
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it Online |
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Price and Availability
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