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Hitachi,Ltd.
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| Part No. |
2SJ318S 2SJ318L
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| OCR Text |
... ? v = ?0 v
pulse test ds foeward transfer admittance vs.
drain current 200 100 50 20 10 ?.1 ?.2 ?.5 ? ? ? ?0 body?rain diode reverse recovery time
t (ns) rr reverse drain current i (a) dr di / dt = 20 a / ?
v =... |
| Description |
Silicon P-Channel MOS FET(P沟道MOSFET)
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| File Size |
55.34K /
8 Page |
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it Online |
Download Datasheet
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IOL
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| Part No. |
1MBC03-120 1MB03D-120
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| OCR Text |
...: IF [A]
Forward current vs. foeward voltage
700
5
Reverse recovery time characteristics vs. -di/dt IF=2.5A, Tj=125C
3.5
600
4
3.0
500
reverse recovery time : trr [nsec]
2.5
3
400
2.0
Forward current : IF ... |
| Description |
1200V / 3A IGBT
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| File Size |
254.15K /
5 Page |
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it Online |
Download Datasheet |
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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| Part No. |
ERC04F
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| OCR Text |
...ve peak reverse voltage Average foeward current Surge current Operating junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Resistive load Ta=40C Sine wave 10ms Conditions -02F 200 1.5 100 -40 to +140 -40 to +140 Rating... |
| Description |
GENERAL USE RECTIFIER DIODE(200V to 400V / 1.5A )
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| File Size |
34.74K /
2 Page |
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it Online |
Download Datasheet |
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For
foeward Found Datasheets File :: 13 Search Time::2.422ms
Page :: | 1 | <2> | |
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