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For fishbone Found Datasheets File :: 20    Search Time::0.922ms    
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    MSC81005 2734

STMicroelectronics
Part No. MSC81005 2734
OCR Text ...icrowave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC81005 is d...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

File Size 98.61K  /  5 Page

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    STMicro
Part No. MSC82040
OCR Text ...led NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at ...
Description RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

File Size 84.40K  /  6 Page

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    MSC81010 2735

STMicroelectronics
Part No. MSC81010 2735
OCR Text ...icrowave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MSC81010 is designed ...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

File Size 100.00K  /  5 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. MSC81058 2739
OCR Text ...icrowave transistor utilizing a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding infinite load VSWR at any phase angle under rated conditions. The MSC81058 is designed ...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

File Size 100.81K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. MS3024
OCR Text ...wave transistor that utilizes a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MS3024 was designed...
Description RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

File Size 123.91K  /  4 Page

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    ST Microelectronics
Part No. MSC82001
OCR Text ...icrowave transistor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. this device is capable of withstanding an infinite load vswr at any phase angle under rated rated conditions. the msc82001 wa...
Description GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS

File Size 160.33K  /  5 Page

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    ST Microelectronics
Part No. MSC82003
OCR Text ...icrowave transistor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. this device is capable of withstanding an infinite load vswr at any phase angle under rated rated conditions. the msc82003 wa...
Description GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS

File Size 169.03K  /  5 Page

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    ST Microelectronics
Part No. MSC82005
OCR Text ...icrowave transistor utilizing a fishbone emitter ballasted geometry with a re- fractory/gold metallization system. this device is capable of withstanding an infinite load vswr at any phase angle under rated rated conditions. the msc82005 wa...
Description GENERAL PURPOSE AMPLIFIER APPLICATIONS RF & MICROWAVE TRANSISTORS

File Size 136.44K  /  5 Page

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    MSC82001 2756

STMICROELECTRONICS[STMicroelectronics]
Part No. MSC82001 2756
OCR Text ...icrowave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82001 was ...
Description From old datasheet system
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

File Size 92.01K  /  5 Page

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