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  fbet Datasheet PDF File

For fbet Found Datasheets File :: 419    Search Time::2.125ms    
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    CPH3105 CPH3205

SANYO[Sanyo Semicon Device]
Part No. CPH3105 CPH3205
OCR Text ... 0.6 Features * Adoption of fbet, MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall-package of 0.9mm mounting heigh facilitates miniaturization in end product...
Description PNP Silicon Epitaxial Planar Transistors High-Current Switching Applications
PNP/NPN Silicon Epitaxial Planar Transistors

File Size 50.42K  /  5 Page

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    CPH6101 CPH6201

Sanyo Semicon Device
Part No. CPH6101 CPH6201
OCR Text ...0.15 Features * Adoption of fbet, MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package permitting applied sets to be made small and slim (0.9mm). * High ...
Description High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 161.96K  /  4 Page

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    CPH6102 CPH6202

Sanyo Semicon Device
Part No. CPH6102 CPH6202
OCR Text ... 0.6 Features * Adoption of fbet, MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package permitting applied sets to be made small and slim (0.9mm). * High ...
Description High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 198.84K  /  4 Page

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    CPH6103 CPH6203

Sanyo Semicon Device
Part No. CPH6103 CPH6203
OCR Text ... 0.6 Features * Adoption of fbet, MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package permitting applied sets to be made small and slim (0.9mm). * High ...
Description High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 186.57K  /  4 Page

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    CPH6104 CPH6204

Sanyo Semicon Device
Part No. CPH6104 CPH6204
OCR Text ... 0.6 Features * Adoption of fbet, MBIT processes. * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching. * Ultrasmall package permitting applied sets to be made small and slim (0.9mm). * High ...
Description High-Current Switching Applications 大电流开关应
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 211.07K  /  4 Page

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    Sanyo
Part No. 2SK1578
OCR Text ... characteristics. * Adoption of fbet process. Package Dimensions unit:mm 2034A [2SK1578] 4.0 2.2 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 12 1.3 3 1.3 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Ga...
Description N-Channel Junction FET Capacitor Microphone Applications
N-Channel Silicon MOSFET

File Size 119.01K  /  4 Page

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    Sanyo
Part No. 2SA1370 2SC3467
OCR Text ...PN), 1.7pF (PNP). * Adoption of fbet process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 123 ( ) : 2SA1370 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitte...
Description PNP/NPN Epitaxial Planar Silicon Transistors

File Size 45.83K  /  5 Page

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    2SC2999

Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SC2999
OCR Text fbet series. * Very small-sized package permitting sets to be smallsized and slim. * High fT (fT=750MHz typ.) and small Cre (Cre=0.6pF typ). Package Dimensions unit:mm 2033 [2SC2999] Specifications Absolute Maximum Ratings at Ta = ...
Description NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications

File Size 188.74K  /  5 Page

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    Sanyo
Part No. 2SD1802 2SB1202
OCR Text ...802] Features * Adoption of fbet, MBIT processes. * Large currrent capacity and wide ASO. * Low collector-to-emitter saturation voltage. * Fast switching speed. * Small and slim package making it easy to make 2SB1202/2SD1802-used sets s...
Description NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
PNP Epitaxial Planar Silicon Transistors High-Current Switching Applications
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 148.92K  /  5 Page

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    2SC2911 2SA1209 2SA120902

Sanyo Semicon Device
Part No. 2SC2911 2SA1209 2SA120902
OCR Text ...ations Features * Adoption of fbet process. * High breakdown voltage. * Good linearity of hFE and small Cob. * Fast switching speed. Package Dimensions unit:mm 2009B [2SA1209/2SC2911] 8.0 4.0 2.7 3.0 1.5 7.0 1.6 0.8 0.8 0.6 ...
Description NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications
PNP/NPN Epitaxial Planar Silicon Transistors

File Size 42.34K  /  5 Page

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