f-966-76 pdf Datasheet P2 Full Text Search --- IC-ON-LINE


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f-966-76 Datasheet PDF File

For f-966-76 Found Datasheets File :: 268 Search Time::2.906ms
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				NEC[NEC]
Part No.	UPA808 UPA808T UPA808T-T1
OCR Text	... dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz * A Super Mini Mold Package Adopted * Built-in 2...966 0.914 0.845 0.764 0.705 0.639 0.587 0.543 0.508 0.478 0.451 0.428 0.408 0.390 0.375 0.361 0.348 ...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
File Size	63.81K / 12 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	...0 Efficiency IDQ = 160 mA f = 960 MHz Output Power (W) 40 A-1 234 101 37 5 699 42 5 20 0 0.0 0.2 0.4 0.6 ...966 0.964 0.961 0.962 0.958 0.967 0.967 0.967 0.969 0.963 0.969 0.969 S22 Ang -78.7 -86.4 -97...
Description	12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5184 2SC5184-T1 2SC5184-T2
OCR Text	...NSIONS @ VCE = 2 V, IC = 3 mA, f = 2 GHz @ VCE = 1 V, IC = 3 mA, f = 2 GHz (Units: mm) 2.1 0.1 1.25 0.1 * Super Mini-Mold package EIA...966 0.914 0.845 0.764 0.705 0.639 0.587 0.543 0.508 0.478 0.451 0.428 0.408 0.390 0.375 0.361 0.348 ...
Description	NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
File Size	57.03K / 12 Page	View it Online	Download Datasheet

				OKI electronic componet... OKI[OKI electronic componets] OKI electronic eomponets
Part No.	KGF1256 KGF1256B KGF1256B_1256
OCR Text	...DO IDS(off) IDSS ID VGS(off) gm F Condition VGS = -3 V VGD = -11 V VDS = 3 V, VGS = -2 V VDS = 3 V, VGS = 0 V (*1), PIN = 5 dBm, f = 850 MHz...966 3.730 3.496 3.307 3.145 2.968 2.830 2.672 2.559 2.432 2.310 2.205 2.092 2.006 1.898 1.816 1.732 ...
Description	Medium-Power Amplifier From old datasheet system
File Size	199.59K / 14 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	UPC1679 UPC1679G UPC1679G-E1 UPC1679G-E2
OCR Text	... V : PO(sat) = +15.5 dBm TYP. @ f = 500 MHz with external inductor : fu = 1.8 GHz TYP. @ 3 dB bandwidth : ISL = 34 dB TYP. @ f = 500 MHz : G...966 13.895 14.401 14.244 14.249 14.096 13.945 13.888 13.645 13.460 13.043 12.509 11.678 10.720 9.763...
Description	5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER 5伏偏置，5.5 dBm的输出，1.8 GHz的宽频带泗MMIC放大
File Size	71.65K / 12 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	2SK2973 SK2973
OCR Text	...gh power gain:Gpe13dB @VDD=9.6V,f=450MHz,Pin=17dBm * High efficiency:55% typ. * Source case type SOT-89 package (connected internally to sou...966 176.140 173.319 171.233 169.940 168.226 VDD=13V,ID=100mA S11 -28.167 -52.309 -71.057 -85.910 ...
Description	From old datasheet system RF POWER MOS FET(VHF/UHF power amplifiers)
File Size	33.43K / 3 Page	View it Online	Download Datasheet

				NEC
Part No.	3SK135A 3SK135A-T1 3SK135A-KS 3SK135A-T2
OCR Text	... = 5 V, VG2S = 4 V, ID = 10 mA, f = 1 kHz VDS = 10 V, VG2S = 4 V, ID = 10 mA, f = 1 MHz Input Capacitance Output capacitance Reverse Tran...966 0.923 0.871 0.841 0.776 0.676 0.631 0.575 0.537 11 -2 -8 -11 -22 -23 -33 -34 -41 -43 -47 -49 ...
Description	For UHF TV tuner high frequency amplification RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
File Size	51.41K / 6 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	3SK318
OCR Text	...cteristics; (NF= 1.4 dB typ. at f= 900 MHz) * Excellent cross modulation characteristics * Capable low voltage operation; +B= 5V Outline ...966 0.960 0.955 0.948 0.942 0.937 0.930 0.923 0.917 0.910 ANG -2.2 -4.5 -6.7 -8.7 -11.0 -13.2 -15.3 ...
Description	Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
File Size	53.09K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	3SK319
OCR Text	...cteristics; (NF= 1.4 dB typ. at f= 900 MHz) * Excellent cross modulation characteristics * Capable low voltage operation; +B= 5V Outline ...966 0.960 0.955 0.948 0.942 0.937 0.930 0.923 0.917 0.910 ANG -2.2 -4.5 -6.7 -8.7 -11.0 -13.2 -15.3 ...
Description	Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
File Size	48.76K / 9 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	EFD25 EFD25-3C30 EFD25-3C85 EFD25-3C90
OCR Text	...ns B (mT) at GRADE H = 250 A/m; f = 25 kHz; T = 100 C 360 320 330 315 300 f = 25 kHz; B = 200 mT; T = 100 C 0.35 0.50 0.35 - - f = 100 kHz;...966/4950 304. Indonesia: P.T. Philips Development Corp., JAKARTA, Tel. (021) 794 0040, Fax. (021) 79...
Description	EFD cores and accessories
File Size	48.31K / 6 Page	View it Online	Download Datasheet

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