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IRF[International Rectifier]
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| Part No. |
IRH7450SE
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| OCR Text |
...tron and heavy ion Single Event effects (SEE) environments. Single Event effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRH7450SE
100K Rads (Si)
Unit... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A)
TRANSISTOR N-CHANNEL(BVdss=500V Rds(on)=0.51ohm Id=11A)
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| File Size |
99.29K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHQ63110 IRHQ6110 IRHQ6110N IRHQ63110N
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| OCR Text |
...oth Total Dose and Single Event effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well establi... |
| Description |
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
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| File Size |
190.29K /
14 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRHF9230 IRHF93230 JANSF2N7390 JANSR2N7390
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| OCR Text |
...oth Total Dose and Single Event effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well establi... |
| Description |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package - 20000kRad高可靠性单P沟道MOSFET的工贸硬化在TO - 205AF
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| File Size |
126.14K /
8 Page |
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it Online |
Download Datasheet |
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