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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BPW34B Q62702-P945
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| OCR Text |
...e surface Halbwinkel Half angle dunkelstrom, VR = 10 V Dark current
A LxB LxW H
7.45 2.73 x 2.73
mm2 mm x mm
0.5
mm
60 2 ( 30)
Grad deg. nA
IR
Semiconductor Group
2
1997-11-19
BPW 34 B
Kennwerte (... |
| Description |
Silicon PIN Photodiode with Enhanced Blue Sensitivity 硅PIN光电二极管的灵敏度增强蓝
Silizium-PIN-Fotodiode mit erh?hter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity
From old datasheet system
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| File Size |
30.17K /
4 Page |
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it Online |
Download Datasheet
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Infineon
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| Part No. |
BPW34S
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| OCR Text |
...e surface Halbwinkel Half angle dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Symbol Symbol S S max Wert Value 80 ( 50) 850 400 ... 1100 Einheit U... |
| Description |
Silizium-PIN-Fotodiode Silicon PIN Photodiode
From old datasheet system
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| File Size |
44.92K /
4 Page |
View
it Online |
Download Datasheet |
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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
SFH2030F SFH2030 SFH203FA Q62702-P955 Q62702-P956 SFH203 Q62702-B918
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| OCR Text |
...scription Halbwinkel Half angle dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standar... |
| Description |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silizium Fotodiode麻省理工sehr库泽Schaltzeit Silizium Fotodiode麻省理工Tageslichtsperrfilter
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| File Size |
199.13K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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