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For diss Found Datasheets File :: 1441    Search Time::1.938ms    
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    Vishay Semiconductors
Part No. CNY117F-1X007T
OCR Text ...i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.0 mw/c parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 70 v collector current i c 50 ma t 1.0 ms i c 100 ma total power dissip...
Description 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER PLASTIC, DIP-6

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    Vishay Intertechnology, Inc.
Part No. VO4254D-X001 VO4254D-X016
OCR Text ... i f 60 ma power dissipation p diss 100 mw derate from 25 c 1.33 mw/c output peak off-state voltage vo4254d/h/m v drm 400 v vo4256c/d/h/m v drm 600 v rms on-state current i tm 300 ma power dissipation p diss 500 mw derate from 25 c 6.6 mw/...
Description 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER ROHS COMPLIANT, DIP-6
1 CHANNEL TRIAC OUTPUT OPTOCOUPLER 0.400 INCH, ROHS COMPLIANT, DIP-6

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    TCET2200

Vishay Siliconix
Part No. TCET2200
OCR Text ...i fsm 1.5 a power dissipation p diss 100 mw junction temperature t j 125 c parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current...
Description (TCET1200 / TCET2200) Optocoupler

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    Vishay
Part No. TCDT1101G TCDT1103G TCDT1102G
OCR Text ... si fsm 3a power dissipation p diss 100 mw junction temperature t j 125 c parameter test condition symbol value unit collector emitter voltage v ceo 32 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current...
Description Optocouplers

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    L9949

STMicroelectronics
Part No. L9949
OCR Text ...l Data of Package Zth (C/W) diss. area dimensions PowerSO20 Z th(j-a) 1x1 sq. mm 2x2 sq. mm 3x3 sq. mm silicon diss. area 10 1 0.1 4x4 sq. mm 5x5 sq. mm die size 6x6 sq. mm mounted on standard board Tamb = 20C still air ...
Description DOOR ACTUATOR DRIVER

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    APT15GP90BDF1

Advanced Power Technology
Part No. APT15GP90BDF1
OCR Text ... max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = 010203040 f max , operating frequency (khz) i c , collector current (a) figure 20, operating ...
Description MOSFET

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    Electronic Theatre Controls, Inc.
Part No. MSK4360S
OCR Text ...5v converter efficiency = 50% p diss due to +15v iq,80 ma x 13v = 1.04 w p diss due to -15v iq, (40 ma / 0.5) x 13v = 1.04 w p diss due to +15v ext load, 20 ma x 13v = 260 mw p diss due to -15v ext load, (20 ma / 0.5) x 13v = 620mw p d...
Description 10 AMP, 55V, 3 PHASE MOSFET BRUSHLESS MOTOR CONTROLLER

File Size 294.34K  /  7 Page

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    Vishay Semiconductors
Part No. CNY117-1X007T CNY117-1X017T CNY117-3X007T CNY117-4X017T CNY117-3X001 CNY117-4X016 CNY117-1X001 CNY117-3X017T CNY117-3X006 CNY117-1X006 CNY117-4X001 CNY117-4X007T CNY117-4X006 CNY117-3X016 CNY117-1X016
OCR Text ...i fsm 2.5 a power dissipation p diss 100 mw derate linearly from 25 c 1.0 mw/c output collector emitter breakdown voltage bv ceo 70 v collector current i c 50 ma t 1.0 ms i c 100 ma total power dissipation p diss 150 mw derate linearly f...
Description
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    Vishay Semiconductors
Part No. SFH6186-3 SFH618A-4X001
OCR Text ...p). fig. 1 - permissible power diss ipation vs. ambient temperature absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6v power dissipation p diss mw forward current i f 60 ma output collecto...
Description 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER

File Size 134.48K  /  8 Page

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    TriQuint Semiconductor, Inc.
Part No. AP503-PCB
OCR Text ...h the following equation: p diss = v cc * i cc ? (output rf power ? input rf power), v cc = operating supply voltage = 12v i cc = operating current {the rf power is converted to watts} while the maximum recommended case t...
Description DCS-band 4W HBT Amplifier Module 集散控制系统瓦异质结双极晶体管放大器模块

File Size 317.72K  /  5 Page

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