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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDD16AN08A0 FDD16AN08A0NL
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| OCR Text |
...ow Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101
Formerly developmental t...40V ID = 50A Ig = 1.0mA 1874 290 91 31 4 9.7 5.7 7.2 47 6 pF pF pF nC nC nC nC nC
Switching Chara... |
| Description |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
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| File Size |
180.66K /
11 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDMS3572
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| OCR Text |
... ns ns nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recov...40V VDD = 50V
1000
Coss
6 4 2 0
100 0 10 20 Qg, GATE CHARGE(nC) 30
f = 1MHz VGS = 0V
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| Description |
N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5mOHM
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| File Size |
497.78K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP61N20
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| OCR Text |
...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
...40V, ID =30.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
200 ------
Typ.
-0.2 -----
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| Description |
200V N-Channel MOSFET
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| File Size |
592.37K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AON6234
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| OCR Text |
...tky style" soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 40v g ds top view 12 3 4 87 6 5 pin1 top view bottom view v ds v gs i dm i as , i ar e as , e ar t j , t stg s... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
344.13K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AON6144
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| OCR Text |
... ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current turn-off delaytime turn-off fall time v gs =10v, v ds =20v, r l =1.0 , r gen =3 diode forward voltage dynamic parameters v gs =4.5v, i d ... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
319.72K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FDPF39N20 FDP39N20 FDP39N20_07 FDP39N2007
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| OCR Text |
...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
...40V, ID = 19.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
200 -----3.0 ------
Typ.
-0.2... |
| Description |
200V N-Channel MOSFET 39 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
1,067.74K /
10 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APTM08TDUM04P
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| OCR Text |
...
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Bod...40V diS/dt = 100A/s Tj = 25C Tj = 25C 100 300
Max 120 90 1.3 6 200
Unit A V V/ns ns
September... |
| Description |
Triple dual common source MOSFET Power Module
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| File Size |
305.08K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM08TDUM04PG
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| OCR Text |
...
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Bod...40V diS/dt = 100A/s Tj = 25C Tj = 25C 100 300
Max 120 90 1.3 6 200
Unit A V V/ns ns nC
July, ... |
| Description |
Triple dual common source MOSFET Power Module
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| File Size |
280.25K /
6 Page |
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it Online |
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Price and Availability
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