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  dbmw Datasheet PDF File

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    Toshiba
Part No. TA4107F
OCR Text ... RF 8 12 12 -57 -46 dbmw dB dbmw dbmw Equivalent Circuit 6 5 2 4 3 REG1 REG2 7 1 8 000707EBA2 * The products described in this document are subject to the foreign exchange and foreign trade laws. * The informatio...
Description
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    2SK3756

Toshiba Semiconductor
Part No. 2SK3756
OCR Text ...12 0.95 Max 1.45 10 5 Unit dbmw % dB V A A Load Mismatch (Note 3) No Degradation Note 3: These characteristic values are measured using measurement tools specified by Toshiba. (Test Condition: f = 470 MHz, VDS = 4.5 V, ...
Description Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

File Size 150.39K  /  5 Page

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    TOSHIBA
Part No. 2SK3078
OCR Text ... output power : p o = 27.0 dbmw (min.) gain : g p = 12.5 db (min.) drain efficiency : d = 46% (typ.) maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 10 v gate-source voltag...
Description FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

File Size 107.67K  /  4 Page

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    2SK3656

Toshiba Semiconductor
Part No. 2SK3656
OCR Text ...utput power p o 27.5 28.4 ? dbmw drain efficiency d 50 64 ? % power gain g p v ds = 3.6 v, i idle = 50 ma (v gs = adjust), f = 470 mhz, p i = 13dbmw, ? 15.4 ? db threshold voltage v th v ds = 3.6 v, i d =0.5 m...
Description Silicon N Channel MOS Type VHF and UHF band Amplifier Applications

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    TOSHIBA
Part No. S-AU84
OCR Text ... high output power : po = 27.5 dbmw (min) low operating current : i cc = 415 ma (typ.) @po = 27.5 dbmw v cc = 3.5 v 1x modulation : i cc = 140 ma (typ.) @po = 17.0 dbmw v cc = 1.3 v 1x modulation ...
Description RF Power Amplifier Module Power Amplifier Module for Japan cdmaOne

File Size 139.02K  /  6 Page

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    TOSHIBA
Part No. TA4019F
OCR Text ... pin ? pout, im3 pin (dbmw) pout, im3 (dbmw) 80 45 40 5 35 60 20 40 30 20 10 25 50 70 30 10 15 0 10 pout im3 v cc 5 v f 44 mhz, 45 mhz ta 25c test circ...
Description Bipolar Linear Integrated Circuit Silicon Monolithic UHF Wide Band Amplifier Applications

File Size 155.66K  /  7 Page

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    2SK3078

Toshiba Semiconductor
Part No. 2SK3078
OCR Text ...in Drain Efficiency : PO = 27.0 dbmw (Min.) : GP = 12.5 dB (Min.) : D = 46% (Typ.) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperatur...
Description 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

File Size 169.20K  /  3 Page

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    TA4500F

Toshiba Semiconductor
Part No. TA4500F
OCR Text ... High input IP3: IIP3LNA = -7.5 dbmw (typ.) IIP3MIX = 7.0 dbmw (typ.) High 1/2 IF reduction ratio: 1/2IFRMIX = 45 dB (typ.) Small package: QS16 (2.5 mm x 2.5 mm x 0.55 mm) QS16 Weight: 0.0065 g (typ.) Absolute Maximum Ratings (Ta = 25C) ...
Description 1.9 GHz Band RX Front-End IC

File Size 327.44K  /  12 Page

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