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d 2030 1 Datasheet PDF File

For d 2030 1 Found Datasheets File :: 926 Search Time::2.406ms
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				INTERSIL[Intersil Corporation]
Part No.	RF1K49156 FN4011
OCR Text	... t1 0.1 t2 NOTES: dUTY FACTOR: d = t1/t2 PEAK TJ = PdM x ZJA x RJA + TA 10-1 100 101 102 103 SINGLE PULSE 0.01 10-3 10-2 t, RECTANGULAR PULSE dURATION (s) FIGURE 3. NORMALIZEd MAXIMUM TRANSIENT THERMAL IMPEdANCE 100 VdSS MAX...
Description	6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET From old datasheet system
File Size	142.22K / 8 Page	View it Online	Download Datasheet

				ELANTEC[Elantec Semiconductor]
Part No.	EL2030 EL2030C EL2030CM EL2030CN
OCR Text	...scription Transimpedance (dVOUT d(bIIN)) VOUT e g10V VOUT e g2 5V (Note 6) AVOL Open Loop dC Voltage Gain VOUT e g10V VOUT e g2 5V (Note 6) ...2030 - 5 Figure 1 NTSC Video differential Gain and Phase Test Set-Up differential Gain and Pha...
Description	120 MHz Current Feedback Amplifier
File Size	392.57K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	SAA7212 SAA7212H
OCR Text	...* Enhanced block mover allows 3 d data move in the external SdRAM. Picture move/Graphic bit maps construction can be done with minimum CPU support. MPEG2 system features SAA7212 * Parsing of MPEG2 PES and MPEG1 packet streams * double...
Description	Integrated MPEG AVG decoder
File Size	93.64K / 20 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E1_d ON2427 MTB4N80E1 MTB4N80E1-d
OCR Text	d Product Preview TMOS E-FET.TM High Energy Power FET d2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate This high volta...2030 400 160 pF VGS(th) 2.0 -- RdS(on) VdS(on) -- -- gFS 2.0 8.24 -- 4.3 12 10 -- mhos -- 3.0 7.0 1....
Description	TMOS E-FET High Energy Power FET d2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
File Size	156.99K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E_d ON2428 ON2426 MTB4N80E
OCR Text	d designer'sTM data Sheet TMOS E-FET.TM High Energy Power FET d2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The d2...2030 400 160 pF VGS(th) 2.0 -- RdS(on) VdS(on) -- -- gFS 2.0 8.24 -- 4.3 12 10 -- mhos -- 3.0 7.0 1....
Description	TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
File Size	191.71K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
Part No.	MTP4N80E_d ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-d
OCR Text	d designer'sTM data Sheet TMOS E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSF...2030 400 160 pF VGS(th) 2.0 -- RdS(on) VdS(on) -- -- gFS 2.0 8.24 -- 4.3 12 10 -- mhos -- 3.0 7.0 1....
Description	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 800 VOLTS RdS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RdSon）\u003d 3.0欧姆
File Size	155.71K / 8 Page	View it Online	Download Datasheet

				Power Integrations Inc POWERINT[Power Integrations, Inc.]
Part No.	TOP222P TOP221P TOP221PNBSP TOP223G TOP223P TOP223Y TOP221 TOP227Y TOP222YN TOP224Y TOP224P TOP226Y TOP221Y TOP222Y TOP225Y TOP221G TOP222G TOP224G
OCR Text	... time to market (R) AC IN d CONTROL TOPSwitch S C PI-1951-091996 description The second generation TOPSwitch-II family ...2030-042397 Figure 6. Typical Waveforms for (1) Normal Operation, (2) Auto-restart, and (3) Power...
Description	Analog IC - datasheet Reference TOP221-227 Three-Terminal Off-Line PWM Switch From old datasheet system
File Size	175.48K / 20 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	SFH2030F SFH2030 SFH203FA Q62702-P955 Q62702-P956 SFH203 Q62702-B918
OCR Text	...2 2.9 x 10-14 W Hz cm * Hz W d* 3.5 x 1012 3.5 x 1012 Semiconductor Group 444 SFH 2030 SFH 2030 F Relative spectral sensitivity SFH 2030 Srel = f () Relative spectral sensitivity SFH 2030 F Srel = f () Photocurrent IP = f...
Description	From old datasheet system Silicon Tuning diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silizium Fotodiode麻省理工sehr库泽Schaltzeit Silizium Fotodiode麻省理工Tageslichtsperrfilter
File Size	199.13K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
Part No.	SFH203FA SFH203 SFH2030 SFH2030F Q62702-P955 Q62702-P956
OCR Text	...A = 25 C) Characteristics (cont'd) Bezeichnung description Halbwinkel Half angle dunkelstrom, VR = 20 V dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Ope...
Description	From old datasheet system Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time FIBER OPTIC PHOTOdIOdE dETECTOR
File Size	225.34K / 4 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd
Part No.	SRS2020 SRS2030 SRS2040 SRS2050 SRS2060
OCR Text	...Forward Voltage @ 10.0A Maximum d.C. Reverse Current @ Tc=25 at Rated dC Blocking Voltage @ Tc=100 Typical Thermal Resistance (Note 1) Typical Junction Capacitance (Note 2) Operating Junction Temperature Range Storage Temperature Range S...
Description	20.0 AMPS. Schottky Barrier Rectifiers
File Size	69.99K / 2 Page	View it Online	Download Datasheet

For d 2030 1 Found Datasheets File :: 926 Search Time::2.406ms
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