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  600 650 Datasheet PDF File

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    2SD1149

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1149
OCR Text ...ion Rank hFE R 400 ~ 800 1VR S 600 ~ 1200 1VS Marking Symbol 0 to 0.1 s Absolute Maximum Ratings (Ta=25C) 0.1 to 0.3 0.40.2 0.8 0.16 -0.06 +0.1 High foward current transfer ratio hFE. Low collector to emitter sat...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 38.00K  /  2 Page

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    2SD601A 2SD0601 2SD0601A 2SB709A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD601A 2SD0601 2SD0601A 2SB709A
OCR Text ...60A 40A 10 20A 800 120 600 80 400 40 200 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage V...
Description    Silicon NPN epitaxial planer type

File Size 37.72K  /  2 Page

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    2SD602 2SD602A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SD602 2SD602A
OCR Text ... Collector current IC (mA) 600 500 Collector current IC (mA) 20 600 500 400 300 200 100 0 160 120 80 40 0 0 20 40 60 80 100 120 140 160 0 0 4 8 12 16 0 2 4 6 8 10 Ambient temperature Ta (C)...
Description Silicon NPN epitaxial planer type

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    2SD661 2SD661A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD661 2SD661A
OCR Text ...IB=10 Base current IB (A) 600 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1.0 Collector current IC (mA) Ta=75C 80 -25C 60 40 Ta=75C 0.1 0.03 0.01 0.1 25C -25C 20 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30...
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

File Size 50.15K  /  3 Page

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    2SD814 2SD814A 2SD0814

PANASONIC[Panasonic Semiconductor]
Part No. 2SD814 2SD814A 2SD0814
OCR Text ...01 0.1 Ta=75C 25C -25C IC/IB=10 600 hFE -- IC 200 VCE=10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 30 100 160 400 120 300 Ta=75C 25C -25C 80 200 ...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

File Size 36.51K  /  2 Page

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    AD5241BR10 AD5241BR100 AD5242BR10 AD5242BR100 AD5242BR100-REEL7 AD5242BR10-REEL7 AD5242BR1M AD5242BRU100-REEL7 AD5242BRU

AD[Analog Devices]
Part No. AD5241BR10 AD5241BR100 AD5242BR10 AD5242BR100 AD5242BR100-REEL7 AD5242BR10-REEL7 AD5242BR1M AD5242BRU100-REEL7 AD5242BRU10-REEL7 AD5242BRU1M-REEL7 AD5241BR1M AD5241BRU10-REEL7 AD5241BRU100-REEL7 AD5241BRU1M-REEL7 AD5241BR10-REEL7 AD5241BR100-REEL7 AD5241 AD5242
OCR Text ...ter Symbol Conditions Min 0 1.3 600 1.3 0.6 600 900 100 300 300 Typ1 Max 400 Unit kHz s ns s s ns ns ns ns ns INTERFACE TIMING CHARACTERISTICS (Applies to all parts.5, 9) SCL Clock Frequency fSCL t1 tBUF Bus Free Time between STOP and START...
Description I2C Compatible 256-Position Digital Potentiometers

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ... = -1200 V, VGE = 0 V diF/dt = -600 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 50 A, VR = -1200 V, VGE = 0 V diF/dt = -600 A/s Tj = 25 C Tj = 125 C 4 12 - Semiconductor Group 3 Jul-31-1996 BSM 50 GB 170 DN2 ...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

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    DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG

DYNEX SEMICONDUCTOR LTD
DYNEX[Dynex Semiconductor]
Part No. DS1107SG37 DS1107SG39 DS1107SG40 DS1107SG38 DS1107SG36 DS1107SG35 DS1107SG
OCR Text ...2t value - (A2s x 103) 15 600 0.01 10 I2t 550 Conduction 5 500 Effective thermal resistance Junction to case C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 d.c. Halfwave 3 phase 12...
Description Rectifier Diode

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