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  60.5 Datasheet PDF File

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    2SA1121 2SA1121SC

HIROSE ELECTRIC Co., Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1121 2SA1121SC
OCR Text ...- -- -0.64 Max -- -- -- -0.5 -0.6 320 -- -- V Unit V V V A V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB...05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.9...
Description TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 晶体管|晶体管|进步党| 35V的五(巴西)总裁| 500mA的一(c)| SOT - 23封装
Silicon PNP Epitaxial
Silicon PNP Transistor

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    2SA1122

HITACHI[Hitachi Semiconductor]
Part No. 2SA1122
OCR Text ... 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warran...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

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    2SA1171

HITACHI[Hitachi Semiconductor]
Part No. 2SA1171
OCR Text ... 1 Typ -- -- -- -- -- 200 1.6 Max -- -0.5 800 -0.75 -0.5 -- -- Unit V A Test conditions I C = -1 mA, RBE = VCB = -75 V, IE = 0...05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.9...
Description Silicon PNP Epitaxial

File Size 23.17K  /  5 Page

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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ...utput capacitance Cob VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 and 2SA1189 are grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 See characteristic curves of 2SA1190 and 2SA119...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...e Noise figure Cob NF VCE = -6 V, I C = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 1 kHz VCE = -6 V, I C = -0.1 mA, Rg = 10 k f = 10 Hz VCB = -6 V, I C = -10 mA, Rg = 0, f = 1 kHz -- 0.2 2.0 ...
Description Silicon PNP Epitaxial

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    2SA2009

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2009
OCR Text ...120 -120 -5 180 130 120 700 - 0.6 Collector to emitter saturation voltage V mV MHz 1
Description    Silicon PNP epitaxial planer type

File Size 41.91K  /  1 Page

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    2SA2010

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2010
OCR Text ...eramic substrate at 15 x 15 x 0.6 mm3. I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collect...
Description    Silicon PNP epitaxial planer type

File Size 48.79K  /  2 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...ed on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitte...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...ed on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Weight: 0.05 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC curr...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Weight: 0.05 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC curr...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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